Megasonic clean with cavity property monitoring

    公开(公告)号:US12128456B2

    公开(公告)日:2024-10-29

    申请号:US18133972

    申请日:2023-04-12

    CPC classification number: B08B3/123 B08B13/00 G01B11/303

    Abstract: A method of cleaning a substrate in a megasonic cleaning chamber, comprises: flowing a cleaning fluid through a supply tube in a megasonic cleaning chamber toward a substrate; using a megasonic transducer to generate megasonic waves through the cleaning fluid and create cavities in the cleaning fluid; and using one or more sensors to determine properties of the cavities in-situ based on emissions received from the cavities. A non-transitory computer readable medium has instructions stored thereon that, when executed, causes the method to be performed.

    Multi-volume baking chamber for mask clean

    公开(公告)号:US11644748B2

    公开(公告)日:2023-05-09

    申请号:US17226775

    申请日:2021-04-09

    Abstract: Embodiments of baking chambers for baking a photomask are provided herein. In some embodiments, a baking chamber includes: a chamber body enclosing a first interior volume and a second interior volume, disposed beneath and fluidly independent from the first interior volume; a radiant heat source disposed in the first interior volume; a photomask support structure configured to support a photomask disposed in the second interior volume; a window disposed between the first interior volume the second interior volume, wherein the window is made of a material that is transparent to thermal radiation; a first gas inlet and a first gas outlet coupled to the first interior volume; and a second gas inlet and a second gas outlet coupled to the second interior volume on opposite ends thereof to facilitate flow of a process gas laterally through the second interior volume and across the photomask support structure.

    Method for removing photoresist from photomask substrate

    公开(公告)号:US11114350B2

    公开(公告)日:2021-09-07

    申请号:US16453773

    申请日:2019-06-26

    Abstract: Methods and apparatus for removing a photoresist layer from a photomask substrate are provided. In one example, a method for removing a photoresist layer from a substrate in a chamber includes generating a first plasma including first radicals from a first gas mixture in a processing chamber, exposing a portion of a photoresist layer on a substrate to the first radicals to remove the portion of the photoresist layer from the substrate, generating a second plasma including second radicals from a second gas mixture, wherein the second radicals have a different composition than the first radicals, and exposing another portion of photoresist layer to the second radicals to remove the second portion of the photoresist layer.

    Baking chamber with shroud for mask clean

    公开(公告)号:US12085849B2

    公开(公告)日:2024-09-10

    申请号:US17229584

    申请日:2021-04-13

    CPC classification number: G03F1/82 B08B7/0078 H05B3/22

    Abstract: Embodiments of baking chambers are provided herein. In some embodiments, a baking chamber for baking a substrate includes: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a shroud disposed in the interior volume opposite the heater, wherein the shroud includes a central opening fluidly coupled to a gas inlet; a plurality of substrate lift pins configured to support a substrate in the interior volume between the heater and the shroud, wherein the shroud includes a plurality of first openings to facilitate the plurality of substrate lift pins; and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior volume extends from the gas inlet, around the heater, and to the gas outlet.

    Single-volume baking chamber for mask clean

    公开(公告)号:US11921422B2

    公开(公告)日:2024-03-05

    申请号:US17226762

    申请日:2021-04-09

    Abstract: Embodiments of baking chambers for baking a substrate and methods of use thereof are provided herein. In some embodiments, a multi-chamber process tool for processing a substrate including: a wet clean chamber for cleaning the substrate; and a baking chamber configured to heat the substrate to remove residue or haze left over after a wet clean process performed in the wet clean chamber, the baking chamber comprising: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a substrate support configured to support a substrate disposed in the interior volume, wherein the substrate support has a direct line of sight with the heater such that the heater heats the substrate support via convection; and a gas inlet and a gas outlet coupled to the interior volume.

    Ultraviolet and ozone clean system

    公开(公告)号:US11798799B2

    公开(公告)日:2023-10-24

    申请号:US17397088

    申请日:2021-08-09

    CPC classification number: H01L21/02052 B08B3/10 B08B7/0057 B08B2203/005

    Abstract: A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

    Megasonic clean with cavity property monitoring

    公开(公告)号:US11654460B2

    公开(公告)日:2023-05-23

    申请号:US17550903

    申请日:2021-12-14

    CPC classification number: B08B3/123 B08B13/00 G01B11/303

    Abstract: Embodiments of megasonic cleaning chambers are provided herein. In some embodiments, a megasonic cleaning chamber includes: a chamber body defining an interior volume therein; a substrate support to support a substrate disposed in the interior volume; a supply tube comprising a transparent material configured to direct a cleaning fluid to the substrate support; a megasonic power generator coupled to the supply tube to provide megasonic power to the cleaning fluid; a megasonic transducer coupled to the megasonic power generator and the supply tube to create megasonic waves in the cleaning fluid and to form cavities in the cleaning fluid, wherein the megasonic transducer is configured to direct the megasonic waves and cavities toward the substrate support; and one or more sensors configured to generate a signal indicative of a property of the cavities in the cleaning fluid.

    Ultraviolet and ozone clean system
    10.
    发明授权

    公开(公告)号:US12159782B2

    公开(公告)日:2024-12-03

    申请号:US18370481

    申请日:2023-09-20

    Abstract: A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

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