公开(公告)号：US10199388B2

公开(公告)日：2019-02-05

申请号：US15214104

申请日：2016-07-19

申请人： Applied Materials, Inc.

发明人： Michael Wenyoung Tsiang ,  Praket P. Jha ,  Xinhai Han ,  Bok Hoen Kim ,  Sang Hyuk Kim ,  Myung Hun Ju ,  Hyung Jin Park ,  Ryeun Kwan Kim ,  Jin Chul Son ,  Saiprasanna Gnanavelu ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Majid K. Shahreza ,  Jason K. Foster

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/3115 ,  H01L29/06 ,  H01L21/768 ,  H01L27/11548 ,  H01L27/11575 ,  H01L21/3105 ,  H01L21/311

摘要： Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.

公开(公告)号：US10483282B2

公开(公告)日：2019-11-19

申请号：US16267151

申请日：2019-02-04

申请人： Applied Materials, Inc.

发明人： Michael Wenyoung Tsiang ,  Praket P. Jha ,  Xinhai Han ,  Bok Hoen Kim ,  Sang Hyuk Kim ,  Myung Hun Ju ,  Hyung Jin Park ,  Ryeun Kwan Kim ,  Jin Chul Son ,  Saiprasanna Gnanavelu ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Majid K. Shahreza ,  Jason K. Foster

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/505 ,  C23C16/52 ,  C23C16/40 ,  H01L27/11582 ,  H01L29/06 ,  H01L21/3115 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11548 ,  H01L21/768 ,  C23C16/455 ,  H01L21/311 ,  H01L21/3105

摘要： Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.