公开(公告)号：US20200243323A1

公开(公告)日：2020-07-30

申请号：US16680289

申请日：2019-11-11

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. KALUTARAGE ,  Mark J. SALY ,  Praket Prakash JHA ,  Jingmei LIANG

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments described and discussed herein provide methods for depositing silicon nitride materials by vapor deposition, such as by flowable chemical vapor deposition (FCVD), as well as for utilizing new silicon-nitrogen precursors for such deposition processes. The silicon nitride materials are deposited on substrates for gap fill applications, such as filling trenches formed in the substrate surfaces. In one or more embodiments, the method for depositing a silicon nitride film includes introducing one or more silicon-nitrogen precursors and one or more plasma-activated co-reactants into a processing chamber, producing a plasma within the processing chamber, and reacting the silicon-nitrogen precursor and the plasma-activated co-reactant in the plasma to produce a flowable silicon nitride material on a substrate within the processing chamber. The method also includes treating the flowable silicon nitride material to produce a solid silicon nitride material on the substrate.

公开(公告)号：US20230243068A1

公开(公告)日：2023-08-03

申请号：US18131255

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. SANCHEZ ,  Mark J. SALY ,  Schubert CHU ,  Abhishek DUBE ,  Srividya NATARAJAN

IPC: C30B29/54 ,  H01L21/02 ,  C07F9/50 ,  C30B25/02 ,  H01L29/08

CPC classification number: C30B29/54 ,  H01L21/02521 ,  C07F9/5009 ,  C30B25/02 ,  H01L21/0262 ,  H01L29/0843

Abstract: Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR′z, where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

公开(公告)号：US20230002878A1

公开(公告)日：2023-01-05

申请号：US17741333

申请日：2022-05-10

Applicant: Applied Materials, Inc.

Inventor： Nancy FUNG ,  Mark J. SALY

IPC: C23C12/00 ,  C23F1/12

Abstract: Disclosed herein is a method for forming metal-oxides in the photoresist to improve profile control. The method includes infiltrating a metal oxide in a photoresist layer by pressurizing a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer, the photoresist layer being disposed on top of and in contact with an underlayer. The underlayer disposed on top of a substrate. The method includes etching the film stack including the photoresist layer implanted with the metal oxide.

公开(公告)号：US20210215664A1

公开(公告)日：2021-07-15

申请号：US16738629

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Mark J. SALY ,  Keenan Navarre WOODS ,  Joseph R. JOHNSON ,  Bhaskar Jyoti BHUYAN ,  William J. DURAND ,  Michael CHUDZIK ,  Raghav SREENIVASAN ,  Roger QUON

IPC: G01N33/487 ,  C12Q1/6869 ,  B82Y15/00

Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.