公开(公告)号：US20140091417A1

公开(公告)日：2014-04-03

申请号：US14040624

申请日：2013-09-28

Applicant: Applied Materials, Inc.

Inventor： Sum-Yee Betty TANG ,  Martin SEAMONS ,  Kiran V. THADANI ,  Abhijit MALLICK

IPC: C09D5/00 ,  H01L31/18 ,  H01L31/0232

CPC classification number: C09D5/006 ,  C23C16/30 ,  C23C16/452 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02325 ,  H01L31/105 ,  H01L31/18

Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract translation: 在衬底上的光活性特征上沉积低折射率涂层的方法包括在其上形成具有一个或多个光活性特征的衬底并将衬底放置在工艺区中。 沉积气体在远程气体激发器中通电，沉积气体包括碳氟化合物气体和添加气体。 远程激活的沉积气体流入工艺区域以在衬底上沉积低折射率涂层。

公开(公告)号：US20140091379A1

公开(公告)日：2014-04-03

申请号：US14040629

申请日：2013-09-28

Applicant: Applied Materials, Inc.

Inventor： Sum-Yee Betty TANG ,  Martin SEAMONS

IPC: C09D5/00 ,  H01L27/146 ,  H01L31/0216

CPC classification number: C09D5/006 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02162

Abstract: A fluorocarbon coating comprises an amorphous structure with CF2 bonds present in an atomic percentage of at least about 15%, and having a refractive index of less than about 1.4. The fluorocarbon coating can be deposited on a substrate by placing the substrate in a process zone comprising a pair of process electrodes, introducing a deposition gas comprising a fluorocarbon gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes.

Abstract translation: 氟碳涂层包含具有CF 2键的无定形结构，其原子百分比为至少约15％，折射率小于约1.4。 通过将基板放置在包括一对工艺电极的工艺区域中，将碳氟涂层沉积在基板上，将包含碳氟化合物气体的沉积气体引入工艺区域，并通过耦合能量形成沉积气体的电容耦合等离子体 到工艺电极。