公开(公告)号：US09818585B2

公开(公告)日：2017-11-14

申请号：US14280201

申请日：2014-05-16

申请人： Applied Materials, Inc.

发明人： Richard J. Green ,  Cheng-Hsiung Tsai ,  Shambhu N. Roy ,  Puneet Bajaj ,  David H. Loo

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/56 ,  H01J37/34

CPC分类号： H01J37/32862 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3408

摘要： Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

公开(公告)号：US20140179108A1

公开(公告)日：2014-06-26

申请号：US13784591

申请日：2013-03-04

申请人： Applied Materials, Inc.

发明人： Dung Huu Le ,  Graeme Jamieson Scott ,  Jivko Dinev ,  Madhava Rao Yalamanchili ,  Khalid Mohiuddin Sirajuddin ,  Puneet Bajaj ,  Saravjeet Singh

IPC分类号： H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32623 ,  H01L21/67069

摘要： Embodiments of the invention generally relate to an apparatus and method for plasma etching. In one embodiment, the apparatus includes a process ring with an annular step away from an inner wall of the ring and is disposed on a substrate support in a plasma process chamber. A gap is formed between the process ring and a substrate placed on the substrate support. The annular step has an inside surface having a height ranging from about 3 mm to about 6 mm. During operation, an edge-exclusion gas is introduced to flow through the gap and along the inside surface, so the plasma is blocked from entering the space near the edge of the substrate.

摘要翻译： 本发明的实施例一般涉及用于等离子体蚀刻的装置和方法。 在一个实施例中，该设备包括具有远离环的内壁的环形台阶并且设置在等离子体处理室中的基板支撑件上的处理环。 在工艺环和放置在衬底支架上的衬底之间形成间隙。 环形台阶具有高度范围为约3mm至约6mm的内表面。 在操作期间，引入边缘排除气体流过间隙并沿着内表面，从而阻止等离子体进入基板边缘附近的空间。