公开(公告)号：US11495454B2

公开(公告)日：2022-11-08

申请号：US16987704

申请日：2020-08-07

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Rick Kustra ,  Bo Qi ,  Abhijit Basu Mallick ,  Kaushik Alayavalli ,  Jay D. Pinson

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/50 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40

Abstract: Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.

公开(公告)号：US11721545B2

公开(公告)日：2023-08-08

申请号：US17035107

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar Singh ,  Rick Kustra ,  Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Krishna Nittala ,  Pramit Manna ,  Kaushik Comandoor Alayavalli ,  Ganesh Balasubramanian

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  B08B7/00 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44

CPC classification number: H01L21/02274 ,  B08B7/0035 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32862 ,  H01L21/02115 ,  H01L21/0332

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

公开(公告)号：US12106958B2

公开(公告)日：2024-10-01

申请号：US18342296

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar Singh ,  Rick Kustra ,  Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Krishna Nittala ,  Pramit Manna ,  Kaushik Alayavalli ,  Ganesh Balasubramanian

IPC: H01L21/02 ,  B08B7/00 ,  C23C16/26 ,  C23C16/44 ,  C23C16/505 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02274 ,  B08B7/0035 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/02115 ,  H01L21/0332

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

公开(公告)号：US20220319841A1

公开(公告)日：2022-10-06

申请号：US17847454

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Rick Kustra ,  Bo Qi ,  Abhijit Basu Mallick ,  Kaushik Alayavalli ,  Jay D. Pinson

IPC: H01L21/02

Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. A plasma may be generated from the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.