公开(公告)号：US20230037320A1

公开(公告)日：2023-02-09

申请号：US17396371

申请日：2021-08-06

Applicant: Applied Materials, Inc.

Inventor： Chen-Ying WU ,  Zhiyuan YE ,  Xuebin LI ,  Sathya CHARY ,  Yi-Chiau HUANG ,  Saurabh CHOPRA

IPC: H01L21/02 ,  H01L29/423 ,  H01L29/08 ,  H01L29/66

Abstract: Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly surfaces with reduced or negligible growth on surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

公开(公告)号：US20230223257A1

公开(公告)日：2023-07-13

申请号：US17573748

申请日：2022-01-12

Applicant: Applied Materials, Inc.

Inventor： Xuebin LI ,  Sathya CHARY ,  Joe MARGETIS

IPC: H01L21/02 ,  C30B25/18 ,  C30B29/10 ,  C23C16/02 ,  C23C16/38

CPC classification number: H01L21/02579 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  C30B25/186 ,  C30B29/10 ,  C23C16/0236 ,  C23C16/38

Abstract: Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300° C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.