-
公开(公告)号:US12068155B2
公开(公告)日:2024-08-20
申请号:US17396371
申请日:2021-08-06
Applicant: Applied Materials, Inc.
Inventor: Chen-Ying Wu , Zhiyuan Ye , Xuebin Li , Sathya Chary , Yi-Chiau Huang , Saurabh Chopra
IPC: H01L21/02 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/04
CPC classification number: H01L21/02211 , H01L29/0847 , H01L29/42392 , H01L29/66439 , H01L29/66742 , H01L29/04
Abstract: Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly surfaces with reduced or negligible growth on surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.