公开(公告)号：US12203163B2

公开(公告)日：2025-01-21

申请号：US17334630

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Goichi Yoshidome ,  Suhas Bangalore Umesh ,  Sushil Arun Samant ,  Martin Lee Riker ,  Wei Lei ,  Kishor Kumar Kalathiparambil ,  Shirish A. Pethe ,  Fuhong Zhang ,  Prashanth Kothnur ,  Andrew Tomko

IPC: C23C14/35 ,  H01J37/34

Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

公开(公告)号：US11492699B2

公开(公告)日：2022-11-08

申请号：US17177875

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Suhas Bangalore Umesh ,  Preetham Rao ,  Shirish A. Pethe ,  Fuhong Zhang ,  Kishor Kumar Kalathiparambil ,  Martin Lee Riker ,  Lanlan Zhong

IPC: C23C14/50 ,  C23C14/54 ,  C23C14/34

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

公开(公告)号：US11417568B2

公开(公告)日：2022-08-16

申请号：US16845749

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei Lei ,  Yi Xu ,  Yu Lei ,  Tae Hong Ha ,  Raymond Hung ,  Shirish A. Pethe

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/285

Abstract: Methods and apparatus for selectively depositing a tungsten layer atop a dielectric surface. In embodiments the method includes: depositing a tungsten layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a dielectric bottom surface of a feature disposed in a substrate to form a first tungsten portion having a first thickness atop the substrate field, a second tungsten portion having a second thickness atop the sidewall, and a third tungsten portion having a third thickness atop the dielectric bottom surface, wherein the second thickness is less than the first thickness and third thickness; oxidizing a top surface of the tungsten layer to form a first oxidized tungsten portion atop the substrate field, a second oxidized tungsten portion atop the side wall, and a third oxidized tungsten portion atop the dielectric bottom surface; removing the first oxidized tungsten portion, the second oxidized tungsten portion and the third oxidized tungsten portion, wherein the second tungsten portion is completely removed from the sidewall; and passivating or completely removing the first tungsten portion from the substrate field.

公开(公告)号：US11315771B2

公开(公告)日：2022-04-26

申请号：US16928606

申请日：2020-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Fuhong Zhang ,  Shirish A. Pethe ,  Martin Lee Riker ,  Lewis Yuan Tse Lo ,  Lanlan Zhong ,  Xianmin Tang ,  Paul Dennis Connors

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32 ,  C23C14/14 ,  C23C14/54

Abstract: Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.

公开(公告)号：US11222816B2

公开(公告)日：2022-01-11

申请号：US16902655

申请日：2020-06-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan Zhong ,  Shirish A. Pethe ,  Fuhong Zhang ,  Joung Joo Lee ,  Kishor Kalathiparambil ,  Xiangjin Xie ,  Xianmin Tang

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/532

Abstract: A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.