公开(公告)号：US20230334201A1

公开(公告)日：2023-10-19

申请号：US17723285

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Raechel Tan ,  Ananda Sankar Kundu ,  Wolfgang Aderhold

IPC: G06F30/18 ,  G05B17/02 ,  G06F30/27

CPC classification number: G06F30/27 ,  G05B17/02 ,  G06F30/18 ,  G06F2119/08

Abstract: Embodiments disclosed herein include a method of developing a reduced order model (ROM) for a model based controller. In an embodiment, the method comprises obtaining a design of a plant, and building a detailed model of the thermal network of the plant from the design of the plant. In an embodiment, the method further comprises obtaining a training input recipe, and running the detailed model using the training input recipe. In an embodiment, the method further comprises generating a plurality of snapshots, wherein each snapshot includes the temperatures of a plurality of components in the detailed model, and utilizing a dynamic mode decomposition with control (DMDc) operation in order to extract the ROM from the plurality of snapshots.

公开(公告)号：US11492704B2

公开(公告)日：2022-11-08

申请号：US16539317

申请日：2019-08-13

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US20230297740A1

公开(公告)日：2023-09-21

申请号：US17695619

申请日：2022-03-15

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Surajit Kumar ,  Dongming Iu ,  Wolfgang Aderhold

IPC: G06F30/27 ,  G06K9/62

CPC classification number: G06F30/27 ,  G06K9/6256 ,  G06F2119/08

Abstract: Embodiments disclosed herein include a method of modeling a rapid thermal processing (RTP) tool. In an embodiment, the method comprises developing a lamp model of an RTP tool, wherein the lamp model comprises a plurality of lamp zones, calculating an irradiance graph for the plurality of lamp zones, multiplying irradiance values of the plurality of lamp zones in the irradiance graph by a power of an existing RTP tool at a given time during a process recipe, summing the multiplied irradiance values for the plurality of lamp zones to form an irradiation graph of the lamp model, using the irradiation graph as an input to a machine learning algorithm, and outputting the temperature across a hypothetical substrate from the machine learning algorithm.

公开(公告)号：US11492699B2

公开(公告)日：2022-11-08

申请号：US17177875

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Suhas Bangalore Umesh ,  Preetham Rao ,  Shirish A. Pethe ,  Fuhong Zhang ,  Kishor Kumar Kalathiparambil ,  Martin Lee Riker ,  Lanlan Zhong

IPC: C23C14/50 ,  C23C14/54 ,  C23C14/34

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

公开(公告)号：US10000847B2

公开(公告)日：2018-06-19

申请号：US14863063

申请日：2015-09-23

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Subramani Iyer ,  Kartik Shah ,  Mehran Behdjat

IPC: H05B3/68 ,  C23C16/00 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67

CPC classification number: C23C16/4583 ,  C23C16/4581 ,  H01L21/67098 ,  H01L21/68785

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

公开(公告)号：US11978646B2

公开(公告)日：2024-05-07

申请号：US15982785

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Dongming Iu ,  Kartik Shah ,  Norman L. Tam ,  Matthew Spuller ,  Jau-Jiun Chen ,  Kong Lung Samuel Chan ,  Elizabeth Neville ,  Preetham Rao ,  Abhilash J. Mayur ,  Gia Pham

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/56 ,  H01L21/687

CPC classification number: H01L21/67103 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/56 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68792 ,  H01L21/67098

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

公开(公告)号：US11021794B2

公开(公告)日：2021-06-01

申请号：US16011383

申请日：2018-06-18

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Subramani Iyer ,  Kartik Shah ,  Mehran Behdjat

IPC: H05B3/68 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

公开(公告)号：US10600664B2

公开(公告)日：2020-03-24

申请号：US15585842

申请日：2017-05-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Preetham Rao ,  Ananthkrishna Jupudi

IPC: H01L21/67 ,  G01K11/32 ,  H01L21/687 ,  H01L21/66 ,  G01K11/20 ,  H01L23/00 ,  H01L23/31

Abstract: Methods and apparatus for measuring the temperature of epoxy resin in an electronics package are provided herein. In some embodiments, apparatus for encapsulating an electronics package includes: a process chamber having a chamber body enclosing a processing volume; a substrate support having a support surface for receiving and supporting a substrate for forming an electronics package; and a temperature sensor to measure a temperature of an epoxy resin in an electronics package. The temperature sensor includes: an input apparatus including at least a light source disposed outside the chamber body to provide an excitation light energy to a portion of the epoxy resin; and an output apparatus including at least a signal analyzer disposed outside the chamber body to detect fluorescent light energy emitted by the portion of the epoxy resin and determine a temperature of the epoxy resin based on the excitation light energy and the fluorescent light energy.

公开(公告)号：US10455642B2

公开(公告)日：2019-10-22

申请号：US15012885

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Abhilash J. Mayur

IPC: H05B3/00 ,  F27B17/00 ,  F27D5/00 ,  H01L21/67

Abstract: A lamphead for thermal processing of a substrate is provided. The lamphead includes a housing having a first edge surrounding a first plane. The lamphead further includes a plurality of segmented lamps disposed within the housing, each segmented lamp aligned substantially parallel to the first plane. Each segmented lamp includes a first end connected to a location on the housing; a first wire segment connected to the first end; a first filament connected to the first wire segment; an intermediate wire segment connected to the first filament; a second filament connected to intermediate wire segment; a second wire segment connected to the second filament; and a second end connected to the second wire segment; where the second end is connected to an opposing location on the housing.

公开(公告)号：US11807931B2

公开(公告)日：2023-11-07

申请号：US17961040

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC classification number: C23C16/45572 ,  C23C16/4583 ,  C23C16/46

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.