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公开(公告)号：US11473189B2
公开(公告)日：2022-10-18
申请号：US16787569
申请日：2020-02-11
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US11222816B2
公开(公告)日：2022-01-11
申请号：US16902655
申请日：2020-06-16
发明人： Lanlan Zhong , Shirish A. Pethe , Fuhong Zhang , Joung Joo Lee , Kishor Kalathiparambil , Xiangjin Xie , Xianmin Tang
IPC分类号： H01L21/768 , H01L21/321 , H01L23/532
摘要： A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.
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公开(公告)号：US20210391176A1
公开(公告)日：2021-12-16
申请号：US16902918
申请日：2020-06-16
IPC分类号： H01L21/285 , H01L21/3213 , H01J37/34 , C23C14/35 , C23C14/18
摘要： Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a highly energetic bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.
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公开(公告)号：US20230113961A1
公开(公告)日：2023-04-13
申请号：US18081276
申请日：2022-12-14
摘要： Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a high power bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.
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公开(公告)号：US11289312B2
公开(公告)日：2022-03-29
申请号：US16438560
申请日：2019-06-12
发明人： Adolph M. Allen , Vanessa Faune , Zhong Qiang Hua , Kirankumar Neelasandra Savandaiah , Anantha K. Subramani , Philip A. Kraus , Tza-Jing Gung , Lei Zhou , Halbert Chong , Vaibhav Soni , Kishor Kalathiparambil
IPC分类号： H01J37/32 , H01J37/34 , C23C16/455 , C23C14/54
摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.
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公开(公告)号：US11932934B2
公开(公告)日：2024-03-19
申请号：US17941137
申请日：2022-09-09
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
CPC分类号： C23C14/54 , C23C14/0605 , C23C14/35 , H01J37/3405 , H01J37/3426 , H01J37/3467 , H01J37/3455 , H01J2237/002 , H01J2237/332
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US20230002885A1
公开(公告)日：2023-01-05
申请号：US17941137
申请日：2022-09-09
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US20200255938A1
公开(公告)日：2020-08-13
申请号：US16787569
申请日：2020-02-11
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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