公开(公告)号：US20160254123A1

公开(公告)日：2016-09-01

申请号：US15149923

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Michael D. WILLWERTH ,  David PALAGASHVILI ,  Valentin N. TODOROW ,  Stephen YUEN

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H05B6/02

CPC classification number: H01J37/321 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H01J37/32321 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67069 ,  H05B6/02 ,  H05B6/108

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

Abstract translation: 提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。 该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，提供了一种用于调谐等离子体处理室的过程，其包括确定处理室内的等离子体的位置，选择耦合到盖式加热器的电感线圈的电感和/或位置，其将等离子体位置从 确定位置到目标位置，以及等离子体处理具有所选择的电感和/或位置的电感线圈的衬底。