公开(公告)号：US12014902B2

公开(公告)日：2024-06-18

申请号：US17887992

申请日：2022-08-15

Applicant: Applied Materials, Inc.

Inventor： Jong Yun Kim ,  Kim Seong Sim ,  Roman M. Mostovoy ,  Won Ho Sung ,  Pei-Chia Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01J37/3244 ,  C23C16/4405 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32477 ,  H01J2237/24507 ,  H01J2237/3321

Abstract: Embodiments described herein relate to process systems for cleaning semiconductor process chamber components. The process systems include a process chamber having process chamber components. The process chamber components include a substrate support disposed within a chamber volume of the process chamber. A gas distribution assembly faces the substrate support. A gas baffle is fluidly coupled to the gas distribution assembly. A sensor system is coupled to the process chamber and is configured to monitor at least one characteristic of the volume of the process chamber. A dynamic gas assist is fluidly coupled to the gas baffle and is communicatively coupled to the sensor.

公开(公告)号：US10134878B2

公开(公告)日：2018-11-20

申请号：US15359325

申请日：2016-11-22

Applicant: Applied Materials, Inc.

Inventor： Hao-Chien Hsu ,  Dong-Kil Yim ,  Tae Kyung Won ,  Xuena Zhang ,  Won Ho Sung ,  Rodney Shunleong Lim

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to methods for forming a TFT having a metal oxide layer. The method may include forming a metal oxide layer and treating the metal oxide layer with a fluorine containing gas or plasma. The fluorine treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.