公开(公告)号：US09653310B1

公开(公告)日：2017-05-16

申请号：US14961495

申请日：2015-12-07

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Xing Zhong ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

公开(公告)号：US10249507B2

公开(公告)日：2019-04-02

申请号：US15496907

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Xing Zhong ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/3213 ,  C30B33/12 ,  C09K13/06

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.