公开(公告)号：US20160013049A1

公开(公告)日：2016-01-14

申请号：US14770641

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Weifeng YE ,  Mei-yee SHEK ,  Mihaela BALSEANU ,  Xiaojun ZHANG ,  Xiaolan BA ,  Yu JIN ,  Li-Qun XIA

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/76825 ,  H01L21/76834

Abstract: Embodiments of the present invention generally relate to a method for forming a dielectric barrier layer. The dielectric barrier layer is deposited over a substrate by a plasma enhanced deposition process. In one embodiment, a gas mixture is introduced into a processing chamber. The gas mixture includes a silicon-containing gas, a nitrogen-containing gas, a boron-containing gas, and argon (Ar) gas.

Abstract translation: 本发明的实施方案一般涉及形成电介质阻挡层的方法。 电介质阻挡层通过等离子体增强沉积工艺沉积在衬底上。 在一个实施例中，将气体混合物引入处理室。 气体混合物包括含硅气体，含氮气体，含硼气体和氩气（Ar）。

公开(公告)号：US20160071724A1

公开(公告)日：2016-03-10

申请号：US14535803

申请日：2014-11-07

Applicant: Applied Materials, Inc.

Inventor： Xiaolan BA ,  Weifeng YE ,  Mei-yee SHEK ,  Yu JIN ,  Li-Qun XIA ,  Deenesh PADHI ,  Alexandros T. DEMOS

IPC: H01L21/02 ,  C23C16/44

CPC classification number: C23C16/4408 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract translation: 本文描述的实施方案通常涉及形成与UV相容的阻挡层叠体。 本文所述的方法可以包括将处理气体输送到位于处理室中的基板。 工艺气体可以被活化以形成活化的工艺气体，活化的工艺气体在衬底的表面上形成阻挡层，阻挡层包括硅，碳和氮。 然后可以从处理室清除活化的工艺气体。 可以将活化的含氮气体输送到阻挡层，活性含氮气体的N 2 :NH 3比率大于约1:1。 然后可以将活化的含氮气体从处理室清除。 上述元件可以执行一次或多次以沉积势垒堆叠。