公开(公告)号：US10665426B2

公开(公告)日：2020-05-26

申请号：US14986168

申请日：2015-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Yana Cheng ,  Zhefeng Li ,  Chi Hong Ching ,  Yong Cao ,  Rongjun Wang

IPC: H01J37/32 ,  C23C14/00 ,  H01J37/34

Abstract: Methods are disclosed for depositing a thin film of compound material on a substrate. In some embodiments, a method of depositing a layer of compound material on a substrate include: flowing a reactive gas into a plasma processing chamber having a substrate to be sputter deposited disposed therein in opposition to a sputter target comprising a metal; exciting the reactive gas into a reactive gas plasma to react with the sputter target and to form a first layer of compound material thereon; flowing an inert gas into the plasma processing chamber; and exciting the inert gas into a plasma to sputter a second layer of the compound material onto the substrate directly from the first layer of compound material. The cycles of target poisoning and sputtering may be repeated until a compound material layer of appropriate thickness has been formed on the substrate.

公开(公告)号：US09048294B2

公开(公告)日：2015-06-02

申请号：US13860618

申请日：2013-04-11

Applicant: Applied Materials, Inc.

Inventor： Jing Tang ,  Zhefeng Li ,  Paul F. Ma ,  David Thompson

IPC: H01L21/768 ,  C23C16/34 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/76843 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.

Abstract translation: 描述的是含锰膜，以及提供含锰膜的方法。 具有Co，Mn，Ru，Ta，Al，Mg，Cr，Nb，Ti或V的掺杂含锰膜能够提高含锰膜的铜屏障性能。 还描述了提供具有包含硅酸锰的第一层和包含含锰膜的第二层的膜的方法。