Plating uniformity control by contact ring shaping
    1.
    发明申请
    Plating uniformity control by contact ring shaping 失效
    通过接触环成形进行电镀均匀性控制

    公开(公告)号:US20040074761A1

    公开(公告)日:2004-04-22

    申请号:US10278527

    申请日:2002-10-22

    Abstract: An apparatus for providing an electrical bias to a substrate in a processing system is described. The apparatus generally includes a conductive annular body defining a central opening. The conductive annular body may have a substrate seating surface adapted to receive the substrate and a plurality of scallops formed on a surface opposing the substrate seating surface. A plurality of electrical contacts may be formed on the substrate seating surface opposite the plurality of scallops. The electrical contacts may be adapted to engage a plating surface of the substrate.

    Abstract translation: 描述了一种用于在处理系统中向基板提供电偏压的装置。 该装置通常包括限定中心开口的导电环形体。 导电环形体可以具有适于容纳衬底的衬底安置表面和形成在与衬底安置表面相对的表面上的多个扇贝。 多个电触头可以形成在与多个扇贝相对的基板支座表面上。 电触点可以适于接合基板的电镀表面。

    System for planarizing metal conductive layers
    2.
    发明申请
    System for planarizing metal conductive layers 失效
    用于平坦化金属导电层的系统

    公开(公告)号:US20030129850A1

    公开(公告)日:2003-07-10

    申请号:US10043561

    申请日:2002-01-08

    Abstract: A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

    Abstract translation: 提供了在基板上平面化金属导电层的方法。 在一个实施例中,在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。 衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。 然后将金属导电层暴露于蚀刻剂气体,以平坦化金属导电层的顶表面。 还提供了一种用于在基板上蚀刻金属导电层的装置。 该装置包括容器,设置在容器中的基板支撑件,附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

    Oxide treatment and pressure control for electrodeposition
    3.
    发明申请
    Oxide treatment and pressure control for electrodeposition 审中-公开
    氧化物处理和电沉积压力控制

    公开(公告)号:US20040069651A1

    公开(公告)日:2004-04-15

    申请号:US10273044

    申请日:2002-10-15

    CPC classification number: C25D7/123 C25D5/34

    Abstract: Method and apparatus for electrodepositing a metal onto a substrate. An oxide treatment process is performed on a substrate prior to making electrical contact between a seed layer of the substrate and a conductive contact element which provides a current. In one embodiment, the pressure at the interface between the seed layer and the conductive contact element is controlled to avoid detrimentally affecting a material(s) of the substrate.

    Abstract translation: 将金属电沉积到基底上的方法和装置。 在衬底的晶种层和提供电流的导电接触元件之间进行电接触之前,在衬底上进行氧化物处理工艺。 在一个实施例中,控制种子层和导电接触元件之间的界面处的压力,以避免不利地影响衬底的材料。

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