Load cup for chemical mechanical polishing
    1.
    发明申请
    Load cup for chemical mechanical polishing 失效
    负载杯用于化学机械抛光

    公开(公告)号:US20040127142A1

    公开(公告)日:2004-07-01

    申请号:US10621303

    申请日:2003-07-16

    CPC classification number: H01L21/68728 B24B37/345 H01L21/68764 H01L21/68771

    Abstract: A load cup for transferring a substrate in a chemical mechanical polishing system is provided. In one embodiment, a load cup for transferring substrates in a chemical mechanical polishing system includes a substrate support having a first side adapted to support a substrate thereon and at least one actuator coupled to the substrate support and adapted to move the substrate support laterally. In another embodiment, a method for transferring a substrate between a polishing head and a load cup includes sensing a position of the polishing head relative to the load cup and automatically aligning the load cup and polishing head in response to the sensed relative position.

    Abstract translation: 提供了用于在化学机械抛光系统中转印衬底的负载杯。 在一个实施例中,用于在化学机械抛光系统中传送衬底的负载杯包括具有适于在其上支撑衬底的第一侧的衬底支撑件和耦合到衬底支撑件并且适于横向移动衬底支架的至少一个致动器。 在另一个实施例中,用于在抛光头和负载杯之间传送衬底的方法包括:检测抛光头相对于负载杯的位置,并根据感测到的相对位置自动对准负载杯和抛光头。

    APPARATUS AND METHOD FOR ELECTRO CHEMICAL PLATING USING BACKSID ELECTRICAL CONTACTE
    3.
    发明申请
    APPARATUS AND METHOD FOR ELECTRO CHEMICAL PLATING USING BACKSID ELECTRICAL CONTACTE 失效
    使用背面电气接触的电化学镀层的装置和方法

    公开(公告)号:US20040173454A1

    公开(公告)日:2004-09-09

    申请号:US09981191

    申请日:2001-10-16

    CPC classification number: C25D7/123 C25D5/028 C25D17/001 C25D17/06 H01L21/2885

    Abstract: An apparatus and method for securing and electrically contacting a substrate on a non-production surface of the substrate. The apparatus includes a substrate holder assembly having a substrate engaging surface formed thereon, the substrate engaging surface being configured to engage a substrate on the non-production surface. The apparatus further includes an electrical contact device positioned on the substrate engaging surface, the electrical contact device including a plurality of radially spaced electrically conductive members configured to electrically communicate with the non-production surface of the substrate positioned on the substrate engaging surface. The method includes depositing a conductive seed layer on a production surface of the substrate, and depositing a backside conductive layer on a portion of the non-production side of the substrate, the backside conductive layer extending around a bevel of the substrate to electrically communicate with the seed layer. The method further includes securing the substrate in a chuck configured to engage the non-production surface of the substrate, contacting the backside conductive layer with an electrical cathode contact on the non-production side of the substrate, and plating over the conductive seed layer via application of an electrolyte to the production surface of the substrate and applying an electrical bias to the electrical cathode contact and an anode in communication with the electrolyte.

    Abstract translation: 一种用于固定和电接触衬底的非生产表面上的衬底的装置和方法。 该设备包括具有形成在其上的衬底接合表面的衬底保持器组件,衬底接合表面被配置为接合非生产表面上的衬底。 所述装置还包括位于所述基板接合表面上的电接触装置,所述电接触装置包括多个径向隔开的导电构件,所述导电构件构造成与位于所述基板接合表面上的所述基板的非生产表面电连通。 该方法包括在衬底的生产表面上沉积导电种子层,以及在衬底的非生产侧的一部分上沉积背面导电层,所述背面导电层围绕衬底的斜面延伸以与 种子层。 该方法还包括将衬底固定在配置成接合衬底的非生产表面的卡盘中,使背面导电层与衬底的非生产侧上的电阴极接触接触,并且在导电种子层上电镀 将电解质施加到基材的生产表面上,并将电偏压施加到电阴极接触件和与电解质连通的阳极。

    System for planarizing metal conductive layers
    4.
    发明申请
    System for planarizing metal conductive layers 失效
    用于平坦化金属导电层的系统

    公开(公告)号:US20030129850A1

    公开(公告)日:2003-07-10

    申请号:US10043561

    申请日:2002-01-08

    Abstract: A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

    Abstract translation: 提供了在基板上平面化金属导电层的方法。 在一个实施例中,在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。 衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。 然后将金属导电层暴露于蚀刻剂气体,以平坦化金属导电层的顶表面。 还提供了一种用于在基板上蚀刻金属导电层的装置。 该装置包括容器,设置在容器中的基板支撑件,附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

    Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection
    5.
    发明申请
    Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection 失效
    通过非接触式去镀层和端点检测来控制半导体晶片上的金属层的平面化

    公开(公告)号:US20030073310A1

    公开(公告)日:2003-04-17

    申请号:US09981505

    申请日:2001-10-16

    Abstract: A non-contact apparatus and method for removing a metal layer from a substrate are provided. The apparatus includes a rotatable anode substrate support member configured to support a substrate in a face-up position and to electrically contact the substrate positioned thereon. A pivotally mounted cathode fluid dispensing nozzle assembly positioned above the anode substrate support member is also provided. A power supply in electrical communication with the anode substrate support member and the cathode fluid dispensing nozzle is provided, and a system controller configured to regulate at least one of a rate of rotation of the anode substrate support member, a radial position of the cathode fluid dispensing nozzle, and an output power of the power supply is provided. The method provides for the removal of a metal layer from a substrate by rotating the substrate in a face up position on a rotatable substrate support member. A cathode fluid dispensing nozzle is positioned over a central portion of the substrate and a metal removing solution is dispensed from the cathode fluid dispensing nozzle onto the central portion of the substrate. An electrical bias is applied between the substrate and the cathode fluid dispensing nozzle, which operates to deplate the metal layer below the fluid dispensing nozzle.

    Abstract translation: 提供了一种用于从基板去除金属层的非接触式设备和方法。 该装置包括可旋转的阳极基板支撑构件,其构造成将基板支撑在面朝上的位置并且电接触定位在其上的基板。 还提供了一种位于阳极基板支撑构件上方的枢转安装的阴极流体分配喷嘴组件。 提供与阳极基板支撑构件和阴极流体分配喷嘴电连通的电源,以及系统控制器,被配置为调节阳极基板支撑构件的旋转速率,阴极流体的径向位置 分配喷嘴,并且提供电源的输出功率。 该方法通过在可旋转的基板支撑构件上面向上的位置旋转基板来提供从基板移除金属层。 阴极流体分配喷嘴位于衬底的中心部分上方,金属去除溶液从阴极流体分配喷嘴分配到衬底的中心部分上。 在衬底和阴极流体分配喷嘴之间施加电偏压,其用于使流体分配喷嘴下方的金属层脱落。

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