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    METHOD TO MORE PRECISELY CALIBRATE THE MECHANICAL TILT AND ROTATION ANGLES OF AN SEM COLUMN
    1.
    发明申请
    METHOD TO MORE PRECISELY CALIBRATE THE MECHANICAL TILT AND ROTATION ANGLES OF AN SEM COLUMN 有权

    公开(公告)号：US20250054726A1

    公开(公告)日：2025-02-13

    申请号：US18231534

    申请日：2023-08-08

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Yehuda Zur ,  Gal Bruner

    IPC: H01J37/22 ,  H01J37/147 ,  H01J37/28

    Abstract: A method of determining a depth of a feature formed in a first region of a sample, by: positioning a test structure with known dimensions in a processing chamber having a charged particle column tilted at a first tilt angle and first rotational angle; determining the first tilt angle and first rotational angle by: taking an image of the test structure with the charged particle column tilted at the first tilt angle and the first rotational angle, measuring, based on the image, distances between multiple edges of the test structure aligned with each other along a vector, determining ratios between the measured distances, and determining a calculated tilt angle and a calculated rotational angle of charged particle column from the ratios and the known dimensions of the structure; transferring the test structure out of the processing chamber and positioning the sample in the processing chamber such that the first region is under a field of view of the charged particle column; taking a first image of the feature with the column tilted at the first tilt angle and first rotational angle and taking a second image of the feature with the column is tilted at a second tilt angle, different than the first tilt angle, and a second rotational angle; and using stereoscopic measurement techniques to determine the depth of the feature based on the first and second images and the calculated tilt angle and calculated rotational angle.

    ANALYZING A BURIED LAYER OF A SAMPLE
    3.
    发明申请
    ANALYZING A BURIED LAYER OF A SAMPLE 有权

    公开(公告)号：US20230019567A1

    公开(公告)日：2023-01-19

    申请号：US17378999

    申请日：2021-07-19

    Applicant: Applied Materials Israel Ltd.

    Inventor： Alexander Mairov ,  Gal Bruner ,  Yehuda Zur

    IPC: G01B15/02

    Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.

    Analyzing a buried layer of a sample
    5.
    发明授权
    Analyzing a buried layer of a sample 有权

    公开(公告)号：US11598633B2

    公开(公告)日：2023-03-07

    申请号：US17378999

    申请日：2021-07-19

    Applicant: Applied Materials Israel Ltd.

    Inventor： Alexander Mairov ,  Gal Bruner ,  Yehuda Zur

    IPC: G01B15/02 ,  H01J37/302 ,  H01J37/304

    Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.

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