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    Intermetal stack for use in a photovoltaic cell
    3.
    发明授权
    Intermetal stack for use in a photovoltaic cell 有权
    用于光伏电池的金属间叠层

    公开(公告)号：US08049104B2

    公开(公告)日：2011-11-01

    申请号：US12571415

    申请日：2009-09-30

    申请人： S. Brad Herner ,  Mark H. Clark

    发明人： S. Brad Herner ,  Mark H. Clark

    IPC分类号： H01L31/00

    CPC分类号： H01L31/0747 ,  H01L21/187 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack.

    摘要翻译： 供体硅晶片可以结合到基底和从施主晶片分离的薄片。 可以从结合到衬底的薄片形成光伏电池。 描述了优化用于这种电池的金属间堆叠。 金属间堆叠可以包括用作四分之一波片的透明导电氧化物层，低电阻层，用于帮助粘附到接收器元件的粘合层，并且还可以包括防止或阻碍堆叠内的不期望扩散的阻挡层 。

    Selective etch for damage at exfoliated surface
    4.
    发明授权
    Selective etch for damage at exfoliated surface 有权
    选择性蚀刻在剥离表面的损伤

    公开(公告)号：US07994064B2

    公开(公告)日：2011-08-09

    申请号：US12484271

    申请日：2009-06-15

    申请人： Mark H. Clark ,  S. Brad Herner ,  Mohamed M. Hilali

    发明人： Mark H. Clark ,  S. Brad Herner ,  Mohamed M. Hilali

    IPC分类号： H01L21/302

    CPC分类号： H01L21/30604 ,  H01L21/76254 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1892 ,  Y02E10/547

    摘要： Ions are implanted into a silicon donor body, defining a cleave plane. A first surface of the donor body is affixed to a receiver element, and a lamina is exfoliated at the cleave plane, creating a second surface of the lamina. There is damaged silicon at the second surface, which will compromise the efficiency of a photovoltaic cell formed from the lamina. A selective etchant, having an etch rate which is positively correlated with the concentration of structural defects in silicon, is used to remove the damaged silicon at the second surface, while removing very little of the relatively undamaged lamina.

    摘要翻译： 离子被植入到硅供体体内，限定了一个解理面。 供体主体的第一表面固定在接收元件上，并且在分裂面上剥离薄片，形成薄片的第二表面。 在第二表面有损坏的硅，这将损害由薄片形成的光伏电池的效率。 使用具有与硅中的结构缺陷的浓度正相关的蚀刻速率的选择性蚀刻剂来除去第二表面处的损坏的硅，同时去除非常少的相对未损伤的层。

    Nonvolatile memory device containing carbon or nitrogen doped diode
    5.
    发明申请
    Nonvolatile memory device containing carbon or nitrogen doped diode 失效
    包含碳或氮掺杂二极管的非易失性存储器件

    公开(公告)号：US20080316808A1

    公开(公告)日：2008-12-25

    申请号：US11819042

    申请日：2007-06-25

    申请人： S. Brad Herner ,  Mark H. Clark ,  Tanmay Kumar

    发明人： S. Brad Herner ,  Mark H. Clark ,  Tanmay Kumar

    IPC分类号： G11C11/00

    CPC分类号： G11C11/36

    摘要： A nonvolatile memory device includes at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration.

    摘要翻译： 非易失性存储器件包括至少一个非易失性存储单元，其包括硅，锗或硅 - 锗二极管，其掺杂有浓度大于不可避免的杂质水平浓度的碳或氮中的至少一种。

    Low temperature, low-resistivity heavily doped p-type polysilicon deposition
    6.
    发明授权
    Low temperature, low-resistivity heavily doped p-type polysilicon deposition 有权
    低温，低电阻率重掺杂p型多晶硅沉积

    公开(公告)号：US06815077B1

    公开(公告)日：2004-11-09

    申请号：US10441601

    申请日：2003-05-20

    申请人： S. Brad Herner ,  Mark H. Clark

    发明人： S. Brad Herner ,  Mark H. Clark

    IPC分类号： B32B1504

    CPC分类号： H01L21/8221 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28525 ,  H01L27/1052

    摘要： A method to create a low resistivity P+ in-situ doped polysilicon film at low temperature from SiH4 and BCl3 with no anneal required. At conventional dopant concentrations using these source gases, as deposition temperature decreases below about 550 degrees C., deposition rate decreases and sheet resistance increases, making production of a high-quality film impossible. By flowing very high amounts of BCl3, however, such that the concentration of boron atoms in the resultant film is about 7×1020 or higher, the deposition rate and sheet resistance are improved, and a high-quality film is produced.

    摘要翻译： 在低温下从SiH4和BCl3生成低电阻P +原位掺杂多晶硅膜的方法，无需退火。 在使用这些源气体的常规掺杂剂浓度下，随着沉积温度降低到约550℃以下，沉积速率降低并且薄层电阻增加，使得生产高质量膜不可能。 然而，通过流动非常大量的BCl 3，使得所得膜中硼原子的浓度为约7×10 20或更高，沉积速率和薄层电阻提高，并且产生高质量的膜。

    INTERMETAL STACK FOR USE IN A PHOTOVOLTAIC CELL
    7.
    发明申请
    INTERMETAL STACK FOR USE IN A PHOTOVOLTAIC CELL 有权
    用于光伏电池的间隔堆叠

    公开(公告)号：US20110076796A1

    公开(公告)日：2011-03-31

    申请号：US12571415

    申请日：2009-09-30

    申请人： S. Brad Herner ,  Mark H. Clark

    发明人： S. Brad Herner ,  Mark H. Clark

    IPC分类号： H01L31/18

    CPC分类号： H01L31/0747 ,  H01L21/187 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack.

    摘要翻译： 供体硅晶片可以结合到基底和从施主晶片分离的薄片。 可以从结合到衬底的薄片形成光伏电池。 描述了优化用于这种电池的金属间堆叠。 金属间堆叠可以包括用作四分之一波片的透明导电氧化物层，低电阻层，用于帮助粘附到接收器元件的粘合层，并且还可以包括防止或阻碍堆叠内的不期望扩散的阻挡层 。

    Low-temperature, low-resistivity heavily doped p-type polysilicon deposition
    8.
    发明授权
    Low-temperature, low-resistivity heavily doped p-type polysilicon deposition 有权
    低温，低电阻率重掺杂p型多晶硅沉积

    公开(公告)号：US07419701B2

    公开(公告)日：2008-09-02

    申请号：US10769047

    申请日：2004-01-30

    申请人： S. Brad Herner ,  Mark H. Clark

    发明人： S. Brad Herner ,  Mark H. Clark

    IPC分类号： C23C16/08

    CPC分类号： H01L21/8221 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28525 ,  H01L27/1052

    摘要： A method to create a low resistivity P+in-situ doped polysilicon film at low temperature from SiH4 and BCl3 with no anneal required. At conventional dopant concentrations using these source gases, as deposition temperature decreases below about 550 degrees C., deposition rate decreases and sheet resistance increases, making production of a high-quality film impossible. By flowing very high amounts of BCl3, however, such that the concentration of boron atoms in the resultant film is about 7×1020 or higher, the deposition rate and sheet resistance are improved, and a high-quality film is produced.

    摘要翻译： 在低温下从SiH 4和BCl 3 3生成低电阻P +原位掺杂多晶硅膜的方法，无需退火。 在使用这些源气体的常规掺杂剂浓度下，随着沉积温度降低到约550℃以下，沉积速率降低并且薄层电阻增加，使得生产高质量膜不可能。 然而，通过流动非常高量的BCl 3 3，使得所得膜中硼原子的浓度为约7×10 20或更高，沉积速率和薄层电阻为 改进，并且制作出高质量的胶片。