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    Semiconductor temperature monitor
    7.
    发明授权
    Semiconductor temperature monitor 失效
    半导体温度监测仪

    公开(公告)号：US06638629B2

    公开(公告)日：2003-10-28

    申请号：US10200904

    申请日：2002-07-22

    申请人： Donna K. Johnson ,  Jerome B. Lasky ,  Glenn R. Miller

    发明人： Donna K. Johnson ,  Jerome B. Lasky ,  Glenn R. Miller

    IPC分类号： C30B502

    CPC分类号： H01L22/34 ,  Y10T428/12674 ,  Y10T428/12681 ,  Y10T428/21

    摘要： A method and structure for fabricating a semiconductor wafer that may be used to monitor the temperature distribution across a wafer surface. A substrate that includes a semiconductor material and a first dopant, has an amorphous layer formed from a top portion of the substrate, and the amorphous layer is doped with a second dopant of polarity opposite to a polarity of the first dopant. Heating of the wafer at 450 to 625 degree C. recrystallizes a portion of the amorphous layer that is adjacent to the substrate at a recrystallization rate that depends on a local temperature on the wafer surface. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface.

    摘要翻译： 一种用于制造半导体晶片的方法和结构，该半导体晶片可用于监测跨晶片表面的温度分布。 包括半导体材料和第一掺杂剂的衬底具有由衬底的顶部形成的非晶层，并且非晶层掺杂有与第一掺杂剂的极性相反极性的第二掺杂剂。 在450〜625℃下对晶片进行加热，以取决于晶片表面的局部温度的再结晶速率，重结晶与基板相邻的部分非晶层。 测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。

    Semiconductor temperature monitor
    8.
    发明授权
    Semiconductor temperature monitor 失效
    半导体温度监测仪

    公开(公告)号：US06472232B1

    公开(公告)日：2002-10-29

    申请号：US09510262

    申请日：2000-02-22

    申请人： Donna K. Johnson ,  Jerome B. Lasky ,  Glenn R. Miller

    发明人： Donna K. Johnson ,  Jerome B. Lasky ,  Glenn R. Miller

    IPC分类号： G01R3126

    CPC分类号： H01L22/34 ,  Y10T428/12674 ,  Y10T428/12681 ,  Y10T428/21

    摘要： A method, and associated structure, for fabricating a semiconductor wafer that may be used to monitor the temperature distribution across the wafer surface. Given a substrate that includes a semiconductor material and a first dopant, an amorphous layer is formed from a top portion of the substrate, and the amorphous layer is doped with a second dopant of polarity opposite to a polarity of the first dopant. The amorphous layer may be formed by directing an ionic species, such as ionic germanium, into the top portion of the substrate. Alternatively, particular second dopants, such as arsenic, may serve to also amorphize the top portion of the substrate. Next, the wafer is heated to a temperature in a range of 450 to 625° C. The heating of the wafer recrystallizes a portion of the amorphous layer that is adjacent to the substrate at a recrystallization rate that depends on a local temperature on the wafer surface. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the recrystallized layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface.

    摘要翻译： 一种用于制造半导体晶片的方法和相关结构，其可用于监测晶片表面上的温度分布。 给定包括半导体材料和第一掺杂剂的衬底，从衬底的顶部形成非晶层，并且非晶层掺杂极性与第一掺杂剂极性相反的第二掺杂剂。 非晶层可以通过将离子物质例如离子锗引入衬底的顶部而形成。 或者，特定的第二掺杂剂（例如砷）也可以用于使基底的顶部部分非晶化。 接下来，将晶片加热到450-625℃的温度。晶片的加热使得与晶片相邻的非晶层的一部分以取决于晶片上的局部温度的再结晶速率重结晶 表面。 加热后，去除晶片，并在晶片表面上的点测量薄层电阻。 由于局部薄层电阻是再结晶层的局部厚度的函数，薄片电阻在晶片表面上的空间分布反映了在晶片加热期间晶片温度跨晶片表面的分布。 测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。