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公开(公告)号：US06425265B1
公开(公告)日：2002-07-30
申请号：US09963035
申请日：2001-09-26
IPC分类号： F25J300
CPC分类号： B01D53/75 , B01D53/04 , B01D53/0438 , B01D53/261 , B01D2253/10 , B01D2253/106 , B01D2256/00 , B01D2257/102 , B01D2257/104 , B01D2257/108 , B01D2257/2045 , B01D2257/502 , B01D2257/504 , B01D2257/7022 , B01D2257/80 , B01D2259/41 , B01D2259/414 , C01B7/093 , Y02C10/08 , Y02P20/152
摘要： A process for removing impurities such as oxygen, nitrogen, carbon monoxide, hydrogen, water (moisture), carbon dioxide, hydrogen chloride, methane and trace metals from crude hydrogen bromide and the apparatus for purifying such crude hydrogen bromide.
摘要翻译： 从粗溴化氢中除去氧，氮，一氧化碳，氢，水（水分），二氧化碳，氯化氢，甲烷和微量金属等杂质的方法，以及纯化这种粗溴化氢的设备。
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公开(公告)号：US6103212A
公开(公告)日：2000-08-15
申请号：US358550
申请日：1999-07-22
CPC分类号： C01G41/04
摘要： This invention is directed to a method for producing UHP tungsten hexafluoride by introducing an amount of crude tungsten hexafluoride to an evaporating process for separation into an amount of tungsten hexafluoride-containing volatile impurities and an amount of non-volatile metallic impurities; passing the amount of tungsten hexafluoride-containing volatile residue to a gas phase adsorption process for separation into an amount of semi-crude tungsten hexafluoride product and an amount of hydrogen fluoride non-volatile residue; and passing the amount of semi-crude tungsten hexafluoride product to a sparging system using UHP helium for separation into a non-volatile UHP tungsten hexafluoride product.
摘要翻译： 本发明涉及一种通过将一定量的六氟化钨引入到用于分离成一定量的含六氟化钨的挥发性杂质和一定量的非挥发性金属杂质的蒸发方法来生产UHP六氟化钨的方法; 将含六氟化钨的挥发性残渣的量通过气相吸附法分离成半粗六氟化钨产物和一定量的氟化氢不挥发残余物; 并将半粗制六氟化钨产品的量用UHP氦气分散到不挥发性UHP六氟化钨产品的喷射系统中。
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公开(公告)号：US06319722B1
公开(公告)日：2001-11-20
申请号：US09275574
申请日：1999-03-24
IPC分类号： G01N3300
CPC分类号： G01N21/8483 , G01N21/783 , G01N33/0044 , Y10T436/11 , Y10T436/110833 , Y10T436/16 , Y10T436/18 , Y10T436/184
摘要： The method measures hydrogen sulfide concentrations in hydride gases in a sealed vessel. The sealed vessel has a gas inlet to receive a stream of hydride gas, a gas outlet to remove the stream of hydride gas and a metal acetate substrate. The stream of hydride gas contains a concentration of hydrogen sulfide gas. Introducing the stream of hydride gas through the gas inlet contacts the acetate substrate with the stream of hydride gas. Reacting the hydrogen sulfide gas contained in the stream of hydride gas with the acetate substrate modifies optical properties of the acetate substrate. Then measuring the optical properties of the acetate substrate determines the concentration of the hydrogen sulfide gas contained in the stream of hydride gas.
摘要翻译： 该方法测量密封容器中氢化物气体中的硫化氢浓度。 密封容器具有用于接收氢气流的气体入口，用于除去氢气气体流的气体出口和金属乙酸盐底物。 氢化物气流含有硫化氢气体的浓度。 通过气体入口引入氢气气体流与氢化物气体流接触醋酸盐底物。 用乙酸酯底物反应氢化物气体流中的硫化氢气体，改变了乙酸盐底物的光学性能。 然后测量醋酸盐底物的光学性质决定氢化物气体流中所含的硫化氢气体的浓度。
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公开(公告)号：US08507929B2
公开(公告)日：2013-08-13
申请号：US12139999
申请日：2008-06-16
摘要： One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.
摘要翻译： III-P发光器件中包括一个或多个渐变成分区域，以减少与器件中的接口相关联的Vf。 根据本发明的实施例，半导体结构包括设置在n型区域和p型区域之间的III-P发光层。 在p型区域和GaP窗口层之间设置分级区域。 铝组合物在分级区域分级。 分级区域可以具有至少150nm的厚度。 在一些实施例中，除了或代替p型区域和GaP窗口层之间的渐变区域之外，铝组合物在设置在蚀刻停止层和n型区域之间的渐变区域中分级。
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