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    Floating back gate electrically erasable programmable read-only memory(EEPROM)
    2.
    发明授权
    Floating back gate electrically erasable programmable read-only memory(EEPROM) 失效
    浮动后门电可擦除可编程只读存储器（EEPROM）

    公开(公告)号：US06445032B1

    公开(公告)日：2002-09-03

    申请号：US09072293

    申请日：1998-05-04

    Applicant: Arvind Kumar ,  Sandip Tiwari

    Inventor： Arvind Kumar ,  Sandip Tiwari

    IPC: H01L29788

    CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/11519 ,  H01L27/1203 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7885

    Abstract: A semiconductor memory and a method of producing the memory, includes a transistor including a first gate having an oxide, and a channel, and a back-plane including a second gate and an oxide thereover, the second gate formed opposite to the channel of the transistor, the second gate including a floating gate, wherein a thickness of the oxide of the back-plane is separately scalable from an oxide of the first gate of the transistor.

    Abstract translation: 一种半导体存储器和一种制造存储器的方法，包括：晶体管，包括具有氧化物的第一栅极和沟道，以及包括第二栅极和其上的氧化物的背面，与第二栅极 晶体管，第二栅极包括浮置栅极，其中背面的氧化物的厚度与晶体管的第一栅极的氧化物分开地可分级。

    Compact SRAMs and other multiple transistor structures
    3.
    发明授权
    Compact SRAMs and other multiple transistor structures 有权
    紧凑型SRAM和其他多晶体管结构

    公开(公告)号：US07365398B2

    公开(公告)日：2008-04-29

    申请号：US11055014

    申请日：2005-02-11

    Applicant: Sandip Tiwari ,  Arvind Kumar

    Inventor： Sandip Tiwari ,  Arvind Kumar

    IPC: H01L29/76 ,  G11C11/00

    CPC classification number: H01L27/1104 ,  H01L27/11

    Abstract: A highly dense form of static random-access memory (SRAM) takes advantage of transistor gates on both sides of silicon and high interconnectivity made possible by the complex form of silicon-on-insulator and three-dimensional integration. This technology allows one to form p-channel and n-channel devices very compactly by taking advantage of placement of gates on both sides, making common contacts and dense interconnections in 3D.

    Abstract translation: 高密度形式的静态随机存取存储器（SRAM）利用了硅两面的晶体管栅极和通过绝缘体上硅和三维集成的复杂形式实现的高互连性。 这种技术允许通过利用两侧的门的放置，在3D中形成常见的接触和密集的互连，从而非常紧凑地形成p沟道和n沟道器件。

    Compact SRAMs and other multiple transistor structures
    4.
    发明申请
    Compact SRAMs and other multiple transistor structures 有权
    紧凑型SRAM和其他多晶体管结构

    公开(公告)号：US20050224994A1

    公开(公告)日：2005-10-13

    申请号：US11055014

    申请日：2005-02-11

    Applicant: Sandip Tiwari ,  Arvind Kumar

    Inventor： Sandip Tiwari ,  Arvind Kumar

    IPC: H01L21/8244 ,  H01L27/11 ,  H01L31/062

    CPC classification number: H01L27/1104 ,  H01L27/11

    Abstract: A highly dense form of static random-access memory (SRAM) takes advantage of transistor gates on both sides of silicon and high interconnectivity made possible by the complex form of silicon-on-insulator and three-dimensional integration. This technology allows one to form p-channel and n-channel devices very compactly by taking advantage of placement of gates on both sides, making common contacts and dense interconnections in 3D.

    Abstract translation: 高密度形式的静态随机存取存储器（SRAM）利用了硅两面的晶体管栅极和通过绝缘体上硅和三维集成的复杂形式实现的高互连性。 这种技术允许通过利用两侧的门的放置，在3D中形成常见的接触和密集的互连，从而非常紧凑地形成p沟道和n沟道器件。

    Floating back gate electrically erasable programmable read-only memory (EEPROM)
    5.
    发明授权
    Floating back gate electrically erasable programmable read-only memory (EEPROM) 失效
    浮动后门电可擦除可编程只读存储器（EEPROM）

    公开(公告)号：US06248626B1

    公开(公告)日：2001-06-19

    申请号：US09116987

    申请日：1998-07-17

    Applicant: Arvind Kumar ,  Sandip Tiwari

    Inventor： Arvind Kumar ,  Sandip Tiwari

    IPC: H01L2176

    CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/11519 ,  H01L27/1203 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7885

    Abstract: A semiconductor memory and a method of producing the memory, includes a transistor including a first gate having an oxide, and a channel, and a back-plane including a second gate and an oxide thereover, the second gate formed opposite to the channel of the transistor, the second gate including a floating gate, wherein a thickness of the oxide of the back-plane is separately scalable from an oxide of the first gate of the transistor.

    Abstract translation: 一种半导体存储器和一种制造存储器的方法，包括：晶体管，包括具有氧化物的第一栅极和沟道，以及包括第二栅极和其上的氧化物的背面，与第二栅极 晶体管，第二栅极包括浮置栅极，其中背面的氧化物的厚度与晶体管的第一栅极的氧化物分开地可分级。

    SUBSTITUTION OF HANDWRITTEN TEXT WITH A CUSTOM HANDWRITTEN FONT
    7.
    发明申请
    SUBSTITUTION OF HANDWRITTEN TEXT WITH A CUSTOM HANDWRITTEN FONT 有权
    用自定义手柄取代手写文字

    公开(公告)号：US20160379048A1

    公开(公告)日：2016-12-29

    申请号：US14752529

    申请日：2015-06-26

    Applicant: Arvind Kumar

    Inventor： Arvind Kumar

    IPC: G06K9/00 ,  G06K9/62 ,  G06T11/60

    CPC classification number: G06K9/00409 ,  G06K9/00355 ,  G06K9/00402 ,  G06K9/6256 ,  G06T11/203 ,  G06T11/60

    Abstract: Systems, apparatuses and methods may provide font substitution based on a custom font. In one example, a custom handwritten font may be generated based on a comparison between handwritten sample text and training text. In another example, handwritten original text may be converted to unique machine text based on a substitution of the handwritten original text with the custom handwritten font. Thus, a user's handwriting may be converted to the user's own best or preferred handwriting.

    Abstract translation: 系统，设备和方法可以提供基于定制字体的字体替换。 在一个示例中，可以基于手写样本文本和训练文本之间的比较来生成自定义手写字体。 在另一个例子中，手写的原始文本可以基于用手写字体代替手写的原始文本而被转换为唯一的机器文本。 因此，用户的笔迹可以被转换成用户自己的最佳或优选的笔迹。

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