公开(公告)号：US11715808B2

公开(公告)日：2023-08-01

申请号：US17195859

申请日：2021-03-09

Applicant: Asahi Kasei Microdevices Corporation

Inventor： Osamu Morohara ,  Yoshiki Sakurai ,  Hiromi Fujita ,  Hirotaka Geka

IPC: H01L31/109 ,  H01L31/0352 ,  H01L31/18 ,  G01J5/08

CPC classification number: H01L31/109 ,  G01J5/0853 ,  H01L31/035236 ,  H01L31/1844

Abstract: Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate 10; a first layer 21 having a first conductivity type on the semiconductor substrate; a light receiving layer 22 on the first layer; and a second layer 23 having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlxIn1-xSb (0.05

公开(公告)号：US10212776B2

公开(公告)日：2019-02-19

申请号：US15850271

申请日：2017-12-21

Applicant: ASAHI KASEI MICRODEVICES CORPORATION

Inventor： Hiromi Fujita ,  Yoshiki Sakurai

IPC: G01J5/00 ,  G01N25/12 ,  H05B33/08 ,  H01L31/0203 ,  H01L31/02 ,  H01L31/16 ,  H01L31/167 ,  G01N25/56 ,  H01L31/0216 ,  H05B33/04 ,  H05B37/02 ,  G01J5/10

Abstract: A light receiving device including: a light receiving element configured to receive at least a portion of light incident from an outside and output an output signal corresponding to amount of received light; a molded resin portion configured to seal at least a portion of the light receiving element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light receiving element and the temperature information; and a compensating unit configured to compensate the output signal, based on the temperature information and the humidity information.

公开(公告)号：US10797198B2

公开(公告)日：2020-10-06

申请号：US16364464

申请日：2019-03-26

Applicant: Asahi Kasei Microdevices Corporation

Inventor： Yoshiki Sakurai ,  Osamu Morohara ,  Hiromi Fujita

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/30

Abstract: Provided is an infrared light emitting device with high emission intensity. The infrared light emitting device includes: a semiconductor substrate; a first compound semiconductor layer; a light emitting layer containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

公开(公告)号：US10433387B2

公开(公告)日：2019-10-01

申请号：US15850380

申请日：2017-12-21

Applicant: ASAHI KASEI MICRODEVICES CORPORATION

Inventor： Hiromi Fujita ,  Yoshiki Sakurai

IPC: H01L31/0203 ,  H05B33/08 ,  H01L31/02 ,  H01L31/16 ,  H01L31/167 ,  G01N25/56 ,  H01L31/0216 ,  H05B33/04 ,  H05B37/02 ,  G01B11/14 ,  G01J5/10 ,  G01N21/3504

Abstract: A light emitting device including: a light emitting element; a molded resin portion configured to seal at least a portion of the light emitting element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

公开(公告)号：US12002897B2

公开(公告)日：2024-06-04

申请号：US18331173

申请日：2023-06-08

Applicant: Asahi Kasei Microdevices Corporation

Inventor： Osamu Morohara ,  Yoshiki Sakurai ,  Hiromi Fujita ,  Hirotaka Geka

IPC: H01L31/109 ,  G01J5/08 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/109 ,  G01J5/0853 ,  H01L31/035236 ,  H01L31/1844

Abstract: An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlzIn1-zSb (0.05