公开(公告)号：US07351656B2

公开(公告)日：2008-04-01

申请号：US11335584

申请日：2006-01-20

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

公开(公告)号：US07994054B2

公开(公告)日：2011-08-09

申请号：US11896271

申请日：2007-08-30

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜 在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属 和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

公开(公告)号：US20080261398A1

公开(公告)日：2008-10-23

申请号：US12010372

申请日：2008-01-24

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

公开(公告)号：US20080090410A1

公开(公告)日：2008-04-17

申请号：US11896271

申请日：2007-08-30

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/4763

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜 在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属 和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

公开(公告)号：US08148274B2

公开(公告)日：2012-04-03

申请号：US12010372

申请日：2008-01-24

申请人： Junichi Wada ,  Atsuko Sakata ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Junichi Wada ,  Atsuko Sakata ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US20060214305A1

公开(公告)日：2006-09-28

申请号：US11335584

申请日：2006-01-20

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US20120152168A1

公开(公告)日：2012-06-21

申请号：US13407802

申请日：2012-02-29

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： C23C16/46 ,  C23C16/511

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US07791202B2

公开(公告)日：2010-09-07

申请号：US12010371

申请日：2008-01-24

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US20080122102A1

公开(公告)日：2008-05-29

申请号：US12010371

申请日：2008-01-24

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L23/48

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US20080272494A1

公开(公告)日：2008-11-06

申请号：US12216584

申请日：2008-07-08

申请人： Seiichi Omoto ,  Tomio Katata ,  Kazuyuki Higashi ,  Hitomi Yamaguchi ,  Hirokazu Ezawa ,  Atsuko Sakata

发明人： Seiichi Omoto ,  Tomio Katata ,  Kazuyuki Higashi ,  Hitomi Yamaguchi ,  Hirokazu Ezawa ,  Atsuko Sakata

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided, including: a first barrier metal film provided by a PVD process in a recess formed in at least one insulating film, and containing at least one metal element belonging to any of the groups 4-A, 5-A, and 6-A; a second barrier metal film continuously provided by at least one of CVD and ALD processes on the first barrier metal film without being opened to atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; a third barrier metal film continuously provided by the PVD process on the second barrier metal film without being opened to the atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; and a first Cu film continuously provided on the third barrier metal film without being opened to the atmosphere and thereafter heated.

摘要翻译： 提供一种半导体器件，包括：通过PVD工艺在形成于至少一个绝缘膜中的凹部中提供的第一阻挡金属膜，并且包含至少一种属于4-A，5-A， 和6-A; 通过CVD和ALD工艺中的至少一种在第一阻挡金属膜上连续提供的第二阻挡金属膜，而不向大气开放，并且含有至少一种属于4-A，5-A， 和6-A; 通过PVD工艺在第二阻挡金属膜上连续提供的第三阻挡金属膜，而不向大气开放，并且含有至少一种属于4-A，5-A和6-A中任何一种的金属元素 ; 以及连续地设置在第三阻挡金属膜上的第一Cu膜，而不向大气开放，然后加热。