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    Common mode choke coil and method for manufacturing the same
    3.
    发明授权
    Common mode choke coil and method for manufacturing the same 有权
    共模扼流线圈及其制造方法

    公开(公告)号：US09245680B2

    公开(公告)日：2016-01-26

    申请号：US13601889

    申请日：2012-08-31

    申请人： Miho Kitamura ,  Hayami Kudo ,  Atsushi Yamamoto ,  Akihiro Nakamura

    发明人： Miho Kitamura ,  Hayami Kudo ,  Atsushi Yamamoto ,  Akihiro Nakamura

    IPC分类号： H01F5/00 ,  H01F27/30 ,  H01F1/00 ,  H01F17/00 ,  H01F41/04

    CPC分类号： H01F17/0013 ,  H01F41/04 ,  H01F41/046 ,  H01F2017/008 ,  Y10T29/49075

    摘要： There is provided a common mode choke coil in which a non-magnetic layer and a second magnetic layer stacked on a first magnetic layer and two facing conductive coils are included in the non-magnetic layer, the non-magnetic layer is formed of sintered glass ceramics, the conductive coils and are formed of a conductor containing copper, and at least one of the first magnetic layer and the second magnetic layer is formed of a sintered ferrite material containing Fe2O3, Mn2O3, NiO, ZnO and CuO. The sintered ferrite material has an Fe2O3-reduced content of 25 to 47 mol % and a Mn2O3-reduced content of 1 to 7.5 mol %, or Fe2O3-reduced content of 35 to 45 mol % and a Mn2O3-reduced content of 7.5 to 10 mol %, and a CuO reduced content of 5 mol %.

    摘要翻译： 提供了一种共模扼流线圈，其中堆叠在第一磁性层上的非磁性层和第二磁性层和两个面对的导电线圈包括在非磁性层中，非磁性层由烧结玻璃形成 陶瓷，导电线圈，由含有铜的导体形成，并且第一磁性层和第二磁性层中的至少一个由含有Fe 2 O 3，Mn 2 O 3，NiO，ZnO和CuO的烧结铁氧体材料形成。 烧结铁氧体材料的Fe 2 O 3还原含量为25〜47摩尔％，Mn2O3还原含量为1〜7.5摩尔％，Fe2O3还原含量为35〜45摩尔％，Mn2O3还原含量为7.5〜10 mol％，CuO还原含量为5mol％。

    Method for producing electronic component
    4.
    发明授权
    Method for producing electronic component 有权
    电子部件的制造方法

    公开(公告)号：US08590123B2

    公开(公告)日：2013-11-26

    申请号：US13564607

    申请日：2012-08-01

    申请人： Atsushi Yamamoto ,  Akihiro Nakamura

    发明人： Atsushi Yamamoto ,  Akihiro Nakamura

    IPC分类号： H01G7/00

    CPC分类号： H01F1/344 ,  C04B35/265 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/6588 ,  C04B2235/662 ,  H01F17/0013 ,  H01F17/04 ,  H01F27/292 ,  H01F41/0246

    摘要： The disclosure provides a method for producing an electronic component in which the oxidation of Cu constituting an internal conductor part of the component is inhibited or prevented in a firing step, and even when a magnetic body part containing NiO, ZnO, Fe2O3, etc. is reduced in the firing step, the magnetic body part is subsequently oxidized to ensure the original characteristics. In producing the electronic component, an unfired laminated body including parts to serve as the magnetic body part and the internal conductor part after firing is subjected to firing in an atmosphere with an oxygen concentration equal to or lower than the equilibrium oxygen partial pressure of Cu—Cu2O, and the fired laminated body is then subjected to an oxygenic-atmosphere heat treatment in an atmosphere with an oxygen concentration of 0.01% or more in a step of decreasing the temperature.

    摘要翻译： 本发明提供一种电子部件的制造方法，其中，在烧成工序中抑制或防止构成部件的内部导体部分的Cu的氧化，并且即使含有NiO，ZnO，Fe2O3等的磁性体部分为 在烧制步骤中减少，磁体部分随后被氧化以确保原始特性。 在制造电子部件时，将包含作为磁性体部分的部分和烧成后的内部导体部分的未烧结的层叠体在氧浓度等于或低于Cu-的平衡氧分压的气氛中进行烧制， 然后在降低温度的步骤中，在氧浓度为0.01％以上的气氛中对烧成的层叠体进行氧气氛热处理。

    LIQUID MEDICATION DISPENSING MACHINE
    5.
    发明申请
    LIQUID MEDICATION DISPENSING MACHINE 有权
    液体药物分配机

    公开(公告)号：US20140261880A1

    公开(公告)日：2014-09-18

    申请号：US14351993

    申请日：2012-09-07

    申请人： Akihiro Nakamura ,  Tetsuya Miyagi

    发明人： Akihiro Nakamura ,  Tetsuya Miyagi

    IPC分类号： B65B3/00

    CPC分类号： B65B3/003 ,  B65B2210/08 ,  G07F13/00 ,  G07F17/0092

    摘要： Provided is a liquid medication dispensing machine that can remove a liquid medication from one end of a supply pipe with higher reliability. The liquid medication dispensing machine includes a plurality of supply nozzles located at equal intervals through which liquid medications flow from a plurality of liquid medication bottles containing the liquid medications, respectively, to a prescription bottle. The plurality of supply nozzles are moved sequentially to a supply position where a supply nozzle faces an upper opening of the prescription bottle. The liquid medication dispensing machine further includes a cleaning unit that removes the liquid medication adhering to the supply nozzle. The supply nozzles are moved sequentially to a cleaning position where the cleaning unit removes the liquid medication from the supply nozzle. The cleaning position is provided at a position away from the supply position by a distance smaller than a spacing between the supply nozzles.

    摘要翻译： 提供了一种液体药物分配机，其可以以更高的可靠性从供给管的一端去除液体药物。 液体药物分配机包括多个供应喷嘴，其间隔相等，液体药物分别从容纳液体药物的多个液体药物瓶流出到处方瓶中。 多个供给喷嘴顺序地移动到供给喷嘴面向处方瓶的上部开口的供给位置。 液体药物分配机还包括清除单元，该清洁单元除去附着在供应喷嘴上的液体药物。 供应喷嘴依次移动到清洁单元，其中清洁单元从供应喷嘴去除液体药物。 清洁位置设置在远离供给位置的距离小于供给喷嘴之间的距离的位置处。

    Solid-state imaging element and driving method of the solid-state imaging element
    7.
    发明授权
    Solid-state imaging element and driving method of the solid-state imaging element 有权
    固态成像元件和固态成像元件的驱动方法

    公开(公告)号：US08629385B2

    公开(公告)日：2014-01-14

    申请号：US12705161

    申请日：2010-02-12

    申请人： Kaneyoshi Takeshita ,  Takashi Kubodera ,  Akihiro Nakamura

    发明人： Kaneyoshi Takeshita ,  Takashi Kubodera ,  Akihiro Nakamura

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

    摘要： Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers.

    摘要翻译： 本发明公开了一种固态成像元件，包括：（A）形成在半导体层中的光接收/电荷存储区域，所述光接收/电荷存储区域包括一个层叠在一起的M个光接收/电荷存储层， 其中M> = 2; （B）形成在半导体层中的电荷输出区域; （C）导电/非导通控制区域，其包括位于光接收/电荷存储区域和电荷输出区域之间的半导体层的一部分; 和（D）适于控制导通/非导通控制区域的导通或非导通状态的导通/非导通控制电极，其中第m电位控制电极设置在第m和第（m + 1）个光 接收/电荷存储层，其中1 @ m @（M-1），以控制光接收/电荷存储层的电位。

    Imaging apparatus and method, electronic device, and program
    8.
    发明授权
    Imaging apparatus and method, electronic device, and program 有权
    成像设备和方法，电子设备和程序

    公开(公告)号：US08466990B2

    公开(公告)日：2013-06-18

    申请号：US12805520

    申请日：2010-08-04

    申请人： Kazuki Nomoto ,  Akihiro Nakamura ,  Takashi Kubodera ,  Kaneyoshi Takeshita ,  Yukihiro Kiyota

    发明人： Kazuki Nomoto ,  Akihiro Nakamura ,  Takashi Kubodera ,  Kaneyoshi Takeshita ,  Yukihiro Kiyota

    IPC分类号： H04N5/217 ,  H04N5/228 ,  H04N9/64 ,  H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/3675

    摘要： An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.

    摘要翻译： 一种成像装置，包括：成像单元，被配置为使用成像装置对图像进行成像; 图像获取单元，被配置为获得由所述成像单元成像的等于黑暗时间的多个图像; 注册单元，被配置为用图像获取单元获得的图像登记像素的输出值改变以超过预定阈值的像素的地址和变化量; 以及校正单元，被配置为基于通过所述处理对象像素的输出值的差异与所述处理对象像素的输出值的差异来对所述处理对象像素的像素值进行比较，当对应于由所述登记单元登记的地址的像素作为处理对象像素时， 处理对象像素的周边像素和处理对象像素的变化量。

    Solid-state image pickup element and driving method thereof
    9.
    发明授权
    Solid-state image pickup element and driving method thereof 有权
    固体摄像元件及其驱动方法

    公开(公告)号：US08362412B2

    公开(公告)日：2013-01-29

    申请号：US12646512

    申请日：2009-12-23

    申请人： Takashi Kubodera ,  Akihiro Nakamura ,  Kaneyoshi Takeshita

    发明人： Takashi Kubodera ,  Akihiro Nakamura ,  Kaneyoshi Takeshita

    IPC分类号： H01L27/00 ,  H01L27/146

    CPC分类号： H01L27/14647 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689

    摘要： A solid-state image pickup element includes: (A) a light receiving/charge accumulating region formed in a semiconductor layer and formed by laminating M (where M≧2) light receiving/charge accumulating layers; (B) a charge outputting region formed in the semiconductor layer; (C) a depletion layer forming region formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region and the charge outputting region; and (D) a control electrode region for controlling a state of formation of a depletion layer in the depletion layer forming region, wherein the solid-state image pickup element further includes a light receiving/charge accumulating layer extending section extending from each light receiving/charge accumulating layer to the depletion layer forming region.

    摘要翻译： 固体摄像元件包括：（A）形成在半导体层中并通过层叠M（其中M≥2）光接收/电荷累积层形成的光接收/电荷累积区; （B）形成在半导体层中的电荷输出区域; （C）由半导体层的一部分形成的耗尽层形成区域，半导体层的一部分位于光接收/电荷累积区域和电荷输出区域之间; 以及（D）用于控制耗尽层形成区域中的耗尽层的形成状态的控制电极区域，其中所述固态摄像元件还包括从每个光接收/ 电荷累积层到耗尽层形成区域。

    Semiconductor device, method of manufacturing the same, and electronic apparatus
    10.
    发明授权
    Semiconductor device, method of manufacturing the same, and electronic apparatus 有权
    半导体装置及其制造方法以及电子设备

    公开(公告)号：US08067313B2

    公开(公告)日：2011-11-29

    申请号：US12657799

    申请日：2010-01-28

    申请人： Akihiro Nakamura

    发明人： Akihiro Nakamura

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L23/48 ,  H01L23/52 ,  H01L23/40

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L29/78

    摘要： Disclosed is a method of manufacturing a semiconductor device including forming a transistor on a first surface of a device substrate, forming a hole in a second surface opposite to the first surface of the device substrate, and supplying hydrogen to a gate insulating film of the transistor from the second surface of the device substrate through the hole.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在器件衬底的第一表面上形成晶体管，在与器件衬底的第一表面相对的第二表面中形成孔，并向晶体管的栅极绝缘膜提供氢 从设备基板的第二表面通过孔。