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1.发明申请Method of Producing Mixed Powder Comprising Noble Metal Powder and Oxide Powder, and Mixed Powder Comprising Noble Metal Powder and Oxide Powder 有权包含贵金属粉末和氧化物粉末的混合粉末和包含贵金属粉末和氧化物粉末的混合粉末的方法公开(公告)号：US20110114879A1
公开(公告)日：2011-05-19
申请号：US12993133
申请日：2009-08-18
申请人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
发明人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
IPC分类号： C09K3/00
CPC分类号： B22F9/30 , C22B11/00 , C22C1/10 , C22C5/04 , C22C32/0021
摘要： Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 μm or less, and 90% or more of the grain size of the oxide powder is 12 μm or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible. Consequently, the present invention aims to omit the drying process at a high temperature and thereby prevent grain growth and aggregation, and further eliminate the pulverization and classification processes in order to considerably reduce the production cost.
摘要翻译： 提供一种制备包含贵金属粉末和氧化物粉末的混合粉末的方法，其中混合贵金属和氧化物粉末的氯化铵盐的粉末，随后将该混合粉末进行焙烧，并通过焙烧过程解吸氯化铵，以便 获得包含贵金属粉末和氧化物粉末的混合粉末，以及含有贵金属粉末和氧化物粉末的混合粉末，其中氯小于1000ppm，氮小于1000ppm，贵金属粉末的粒径为90％以上 为20μm以下，氧化物粉末的粒径的90％以上为12μm以下。 消除贵金属粉末生产中的冗余工艺，省略工艺，尽可能地除去包含在负责肼还原反应的皇家水和氮中的氯。 因此，本发明的目的是在高温下省略干燥过程，从而防止晶粒生长和聚集，并且进一步消除粉碎和分级过程，以显着降低生产成本。
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2.发明授权Method of producing mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder 有权包含贵金属粉末和氧化物粉末的混合粉末的制造方法以及包含贵金属粉末和氧化物粉末的混合粉末公开(公告)号：US08758476B2
公开(公告)日：2014-06-24
申请号：US12993133
申请日：2009-08-18
申请人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
发明人： Atsutoshi Arakawa , Kazuyuki Satoh , Atsushi Sato
CPC分类号： B22F9/30 , C22B11/00 , C22C1/10 , C22C5/04 , C22C32/0021
摘要： Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 μm or less, and 90% or more of the grain size of the oxide powder is 12 μm or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible. Consequently, the present invention aims to omit the drying process at a high temperature and thereby prevent grain growth and aggregation, and further eliminate the pulverization and classification processes in order to considerably reduce the production cost.
摘要翻译： 提供一种制备包含贵金属粉末和氧化物粉末的混合粉末的方法，其中混合贵金属和氧化物粉末的氯化铵盐的粉末，随后将该混合粉末进行焙烧，并通过焙烧过程解吸氯化铵，以便 获得包含贵金属粉末和氧化物粉末的混合粉末，以及含有贵金属粉末和氧化物粉末的混合粉末，其中氯小于1000ppm，氮小于1000ppm，贵金属粉末的粒径为90％以上 为20μm以下，氧化物粉末的粒径的90％以上为12μm以下。 消除贵金属粉末生产中的冗余工艺，省略工艺，尽可能地除去包含在负责肼还原反应的皇家水和氮中的氯。 因此，本发明的目的是在高温下省略干燥过程，从而防止晶粒生长和聚集，并且进一步消除粉碎和分级过程，以显着降低生产成本。
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3.发明授权公开(公告)号：US09181617B2
公开(公告)日：2015-11-10
申请号：US13808938
申请日：2011-01-28
CPC分类号： C23C14/3407 , C22C1/0433 , C22C19/07 , C22C32/0026 , C22F1/10 , C23C14/3414 , G11B5/851 , H01F10/16 , H01F41/18
摘要： Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 提供一种铁磁材料的溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，所述目标结构体包括作为基础金属的相（A）和具有与相（A）以外的周边构造不同的成分组成的金属相（B），最大范围内的氧化物占所述面积比1μm以内 金属相（B）的外周的平均粒径为80％以下，金属相（B）的平均粒径为10μm以上且150μm以下。 本发明提供能够抑制溅射时粒子产生的强磁性材料的溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。
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4.发明申请公开(公告)号：US20120097535A1
公开(公告)日：2012-04-26
申请号：US13320840
申请日：2010-09-30
IPC分类号： C23C14/06
CPC分类号： C23C14/3414 , B22F2998/00 , C22C19/07 , C22C32/00 , C22C2202/02 , H01F41/183 , C22C32/0026 , B22F9/082
摘要： A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 一种铁磁溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，在所述基体金属（A）中，所述基体金属（A）和含有90重量％以上的Co的平坦相（B），所述相（B）的平均粒径为10μm， 多于150μm以下，相（B）的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。
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公开(公告)号：US20120118734A1
公开(公告)日：2012-05-17
申请号：US13383886
申请日：2010-09-30
申请人： Atsushi Sato , Atsutoshi Arakawa
发明人： Atsushi Sato , Atsutoshi Arakawa
CPC分类号： C22C19/07 , C22C1/0433 , C23C14/3414 , H01F41/183
摘要： A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 由具有20mol％以下的Cr，Co作为其余部分的金属制成的铁磁材料溅射靶，其中，所述靶的结构包括金属基板（A），并且在所述金属基板（A）中， ，含有90重量％以上的Co的球状相（B），其中最长直径和最短直径之间的差为0〜50％。 本发明提供能够提高漏电磁通量的磁铁材料溅射靶，从而通过磁控溅射装置获得稳定的放电。
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6.发明授权公开(公告)号：US08679268B2
公开(公告)日：2014-03-25
申请号：US13320840
申请日：2010-09-30
CPC分类号： C23C14/3414 , B22F2998/00 , C22C19/07 , C22C32/00 , C22C2202/02 , H01F41/183 , C22C32/0026 , B22F9/082
摘要： A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 一种铁磁溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，在所述基体金属（A）中，所述基体金属（A）和含有90重量％以上的Co的平坦相（B），所述相（B）的平均粒径为10μm， 多于150μm以下，相（B）的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。
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公开(公告)号：US09228251B2
公开(公告)日：2016-01-05
申请号：US13383886
申请日：2010-09-30
申请人： Atsushi Sato , Atsutoshi Arakawa
发明人： Atsushi Sato , Atsutoshi Arakawa
CPC分类号： C22C19/07 , C22C1/0433 , C23C14/3414 , H01F41/183
摘要： A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 由具有20mol％以下的Cr，Co作为其余部分的金属制成的铁磁材料溅射靶，其中，所述靶的结构包括金属基板（A），并且在所述金属基板（A）中， ，含有90重量％以上的Co的球状相（B），其中最长直径和最短直径之间的差为0〜50％。 本发明提供能够提高漏电磁通量的磁铁材料溅射靶，从而通过磁控溅射装置获得稳定的放电。
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公开(公告)号：US20140001038A1
公开(公告)日：2014-01-02
申请号：US14004227
申请日：2012-04-06
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C19/07 , C23C14/35 , G11B5/851
摘要： Provided is a nonmagnetic-material-dispersed sputtering target having a metal composition comprising 20 mol % or less of Cr and the balance of Co. The target has a structure including a phase (A) in which a nonmagnetic oxide material is dispersed in the basis metal, and a metal phase (B) containing 40 mol % or more of Co; the area proportion of grains of the nonmagnetic oxide material in the phase (A) is 50% or less; and when a minimum-area rectangle circumscribed to the phase (B) is assumed, the proportion of the circumscribed rectangle having a short side of 2 to 300 μm is 90% or more of all of the phases (B). The ferromagnetic sputtering target can suppress particle generation during sputtering and can improve leakage magnetic flux to allow stable electrical discharge with a magnetron sputtering apparatus.
摘要翻译： 本发明提供一种非磁性材料分散溅射靶，其具有包含20mol％以下的Cr和余量的Co的金属组成物。靶具有包括其中非磁性氧化物材料分散在基材中的相（A）的结构 金属和含有40摩尔％以上的Co的金属相（B） 相（A）中非磁性氧化物材料的面积比例为50％以下; 并且当假设包围相（B）的最小面积矩形时，具有2〜300μm的短边的外接矩形的比例为所有相（B）的90％以上。 铁磁性溅射靶可以抑制溅射时的粒子产生，能够提高漏磁通，能够通过磁控溅射装置进行稳定的放电。
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9.发明申请公开(公告)号：US20130112555A1
公开(公告)日：2013-05-09
申请号：US13808938
申请日：2011-01-28
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C22C1/0433 , C22C19/07 , C22C32/0026 , C22F1/10 , C23C14/3414 , G11B5/851 , H01F10/16 , H01F41/18
摘要： Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
摘要翻译： 提供一种铁磁材料的溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，所述目标结构体包括作为基础金属的相（A）和具有与相（A）以外的周边构造不同的成分组成的金属相（B），最大范围内的1um以内的氧化物占据的面积比 金属相（B）的外周边为80％以下，金属相（B）的平均粒径为10μm以上且150μm以下。 本发明提供能够抑制溅射时粒子产生的强磁性材料的溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。
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公开(公告)号：US20130206593A1
公开(公告)日：2013-08-15
申请号：US13882233
申请日：2011-12-15
申请人： Atsutoshi Arakawa , Yuki Ikeda
发明人： Atsutoshi Arakawa , Yuki Ikeda
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , G11B5/851 , H01F41/183
摘要： Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus.
摘要翻译： 本发明提供一种含有金属含量为20摩尔％以下的组成的金属的铁磁材料溅射靶，其含量为0.5摩尔％以上且30摩尔％以下，余量为 Co，其中所述靶具有包括贱金属（A）和所述贱金属（A）内的包含35mol％或更多Ru的Co-Ru合金相（B）的结构。 本发明提供一种铁磁材料溅射靶，其能够提高泄漏磁通量，从而通过磁控管溅射装置进行稳定的放电。
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