摘要:
A microlithographic projection exposure apparatus contains an illumination system for generating projection light and a projection lens with which a reticle that is capable of being arranged in an object plane of the projection lens can be imaged onto a light-sensitive layer that is capable of being arranged in an image plane of the projection lens. The projection lens is designed for immersion mode, in which a final lens element of the projection lens on the image side is immersed in an immersion liquid. A terminating element that is transparent in respect of the projection is fastened between the final lens element on the image side and the light-sensitive layer.
摘要:
A microlithographic projection exposure apparatus contains an illumination system for generating projection light and a projection lens with which a reticle that is capable of being arranged in an object plane of the projection lens can be imaged onto a light-sensitive layer that is capable of being arranged in an image plane of the projection lens. The projection lens is designed for immersion mode, in which a final lens element of the projection lens on the image side is immersed in an immersion liquid. A terminating element that is transparent in respect of the projection is fastened between the final lens element on the image side and the light-sensitive layer.
摘要:
A projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, and has a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size. For working wavelengths below 200 nm, structural widths of substantially under 100 nm can be resolved when use is made of immersion fluids between the projection objective and substrate.
摘要:
A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses of positive and negative refractive powers, wherein the following relation is fulfilled: 2 · y · NA · 1 k · ∑ i = 1 k φ i ≥ V 1 wherein: y is half a diameter in mm of a maximum image field imaged by the projection optical system, NA is a maximum numerical aperture on a side of the second object, φi is a refractive power in mm−1 of the ith lens, k is a total number of lenses of the projection optical system, and wherein V1 is greater than 0.045.
摘要:
A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups in the case of which a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power are provided. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size. For working wavelengths below 200 nm, structural widths of substantially under 100 nm can be resolved when use is made of immersion fluids between the projection objective and substrate.
摘要:
A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses of positive and negative refractive powers, wherein the following relation is fulfilled: 2 · y · NA · 1 k · ∑ i = 1 k φ i ≥ V 1 wherein: y is half a diameter in mm of a maximum image field imaged by the projection optical system, NA is a maximum numerical aperture on a side of the second object, φi is a refractive power in mm−1 of the ith lens, k is a total number of lenses of the projection optical system, and wherein V1 is greater than 0.045.
摘要:
A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups in the case of which a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power are provided. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size. For working wavelengths below 200 nm, structural widths of substantially under 100 nm can be resolved when use is made of immersion fluids between the projection objective and substrate.
摘要:
A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.
摘要:
A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.
摘要:
Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.