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公开(公告)号：US09255345B2
公开(公告)日：2016-02-09
申请号：US14332653
申请日：2014-07-16
IPC分类号： H01L21/00 , C30B25/16 , H01L31/028 , H01L31/111 , C30B29/68 , C30B29/52 , C30B29/06 , H01L21/02 , H01L27/144
CPC分类号： C30B25/165 , C30B29/06 , C30B29/52 , C30B29/68 , H01L21/02507 , H01L21/02532 , H01L27/1446 , H01L31/028 , H01L31/035254 , H01L31/105 , H01L31/111
摘要： A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth.
摘要翻译： 公开了使用超高真空 - 化学气相沉积（UHV-CVD）系统生长硅 - 锗染色层超晶格（SLS）的批量制造方法和使用它的检测器。 生长方法克服了由硅和锗晶格失配引起的应力，并导致均匀，无缺陷的逐层生长。 在层生长之间冲洗氢在超晶格结构（SLS）层之间产生突变结。 步骤包括在锗种子层上流动磷化氢和锗烷气体的混合物。 这种原位掺杂的锗生长步骤产生n掺杂的锗层。 一些磷扩散到下面的锗中，并降低最初由锗和硅之间的晶格失配产生的下伏锗的应力。 如果需要p掺杂层，则可以用乙硼烷代替膦。 应力的减少导致光滑的大量锗生长。
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公开(公告)号：US20150028286A1
公开(公告)日：2015-01-29
申请号：US14332653
申请日：2014-07-16
IPC分类号： C30B25/16 , H01L31/111 , C30B29/06 , C30B29/68 , C30B29/52 , H01L31/028 , H01L27/146
CPC分类号： C30B25/165 , C30B29/06 , C30B29/52 , C30B29/68 , H01L21/02507 , H01L21/02532 , H01L27/1446 , H01L31/028 , H01L31/035254 , H01L31/105 , H01L31/111
摘要： A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth.
摘要翻译： 公开了使用超高真空 - 化学气相沉积（UHV-CVD）系统生长硅 - 锗染色层超晶格（SLS）的批量制造方法和使用它的检测器。 生长方法克服了由硅和锗晶格失配引起的应力，并导致均匀，无缺陷的逐层生长。 在层生长之间冲洗氢在超晶格结构（SLS）层之间产生突变结。 步骤包括在锗种子层上流动磷化氢和锗烷气体的混合物。 这种原位掺杂的锗生长步骤产生n掺杂的锗层。 一些磷扩散到下面的锗中，并降低最初由锗和硅之间的晶格失配产生的下伏锗的应力。 如果需要p掺杂层，则可以用乙硼烷代替膦。 应力的减少导致光滑的大量锗生长。
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