Abstract:
A technique for the preparation of iron oxide films designed for use as photomasks for thin film and semiconductor processing involves sputtering iron in a carbon monoxide ambient containing carbon dioxide upon a substrate member.
Abstract:
Supported photomasks useful in the fabrication of printed circuitry are produced by laser machining of amorphous iron oxide film blanks. Resolution improvement relative to that obtained by use of other film materials is ascribed to crystallization of film regions bordering those which are volatilized.
Abstract:
A TECHNIQUE FOR THE PREPARATION IRON OXIDE FILMS DESTINED FOR USE AS PHOTOMASKS FOR THIN FILM AND SEMICONDUCTOR PROCESSING INVOLVES SPUTTERING IRON OXIDE IN A CARBON DIOXIDE AMBIENT UPON AN ELECTRICALLY ISOLATED SUBSTRATE MEMBER.
Abstract translation:1346814溅射氧化铁WESTERN ELECTRIC CO公司1971年6月9日[1970年6月15日] 19691/71标题C7F [也在G2部分]光掩模是通过阴极溅射基底上的一层氧化铁在包含至少3% 体积二氧化碳,然后蚀刻。 优选将亚铁或三氧化铁(例如,3480A厚的Fe 2 O 3膜)溅射到冷却的玻璃基板上,在3-100%CO 2的气氛中任选与稀有气体混合,使用10 - 1 SP>至10 -3 SP> Torr,使用1-5kV的DC偏置RF电位和至少0-1兆兆频率。