Technique for the preparation of iron oxide films by cathodic sputtering
    3.
    发明授权
    Technique for the preparation of iron oxide films by cathodic sputtering 失效
    通过阴极溅射制备氧化铁膜的技术

    公开(公告)号:US3650921A

    公开(公告)日:1972-03-21

    申请号:US3650921D

    申请日:1970-06-15

    CPC classification number: G03F1/54 G03F1/50

    Abstract: A TECHNIQUE FOR THE PREPARATION IRON OXIDE FILMS DESTINED FOR USE AS PHOTOMASKS FOR THIN FILM AND SEMICONDUCTOR PROCESSING INVOLVES SPUTTERING IRON OXIDE IN A CARBON DIOXIDE AMBIENT UPON AN ELECTRICALLY ISOLATED SUBSTRATE MEMBER.

    Abstract translation: 1346814溅射氧化铁WESTERN ELECTRIC CO公司1971年6月9日[1970年6月15日] 19691/71标题C7F [也在G2部分]光掩模是通过阴极溅射基底上的一层氧化铁在包含至少3% 体积二氧化碳,然后蚀刻。 优选将亚铁或三氧化铁(例如,3480A厚的Fe 2 O 3膜)溅射到冷却的玻璃基板上,在3-100%CO 2的气氛中任选与稀有气体混合,使用10 - 1 至10 -3 Torr,使用1-5kV的DC偏置RF电位和至少0-1兆兆频率。

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