公开(公告)号：US3906542A

公开(公告)日：1975-09-16

申请号：US26278772

申请日：1972-06-14

Applicant: BELL TELEPHONE LABOR INC

Inventor： KRAMBECK ROBERT HAROLD ,  SMITH GEORGE ELWOOD ,  STRAIN ROBERT JOSEPH

IPC: H01L29/762 ,  H01L21/339 ,  H01L29/10 ,  H01L29/768 ,  H03K3/353

CPC classification number: H01L29/1062 ,  H01L29/76875

Abstract: There is disclosed improved charge coupled devices having, under the gaps between electrodes, heavily doped zones of a conductivity type such that the majority carriers in the zones are of the same polarity as the mobile charge carriers used for representing signal information. In a described embodiment, lightly doped zones of semiconductivity type opposite that of the heavily doped zones are disposed under the trailing edge of each electrode and intersecting the heavily doped zones. The heavily doped zones facilitate charge transfer across the gaps between electrodes; and the lightly doped zones provide potential wells of requisite asymmetry for two-phase operation. Advantages include reduced sensitivity to spurious surface charge, due to the heavily doped zones, and simpler fabrication and potentially smaller bit length, due to the intersecting of the heavily doped and the lightly doped zones.

Abstract translation: 公开了改进的电荷耦合器件，其在电极之间的间隙处具有导电类型的重掺杂区域，使得该区域中的多数载流子具有与用于表示信号信息的移动电荷载流子相同的极性。 在所描述的实施例中，半导体性类型与重掺杂区相反的轻掺杂区设置在每个电极的后缘下方并与重掺杂区相交。 重掺杂区域有助于跨越电极之间的间隙的电荷转移; 并且轻掺杂区为两相操作提供必要的不对称性的潜在孔。 优点包括由于重掺杂区域而导致的对杂散表面电荷的敏感性降低，以及由于重掺杂区和轻掺杂区的相交而导致的更简单的制造和潜在的较小的位长度。

公开(公告)号：US3921195A

公开(公告)日：1975-11-18

申请号：US45850774

申请日：1974-04-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： SMITH GEORGE ELWOOD ,  STRAIN ROBERT JOSEPH

IPC: G11C19/28 ,  G11C27/04 ,  H01L27/105 ,  H01L29/423 ,  H01L29/49 ,  H01L29/768 ,  H01L27/10 ,  H01L29/78

CPC classification number: H01L29/76875 ,  G11C19/282 ,  G11C27/04 ,  H01L27/1057 ,  H01L29/42396 ,  H01L29/495 ,  H01L29/76883 ,  H01L29/76891 ,  Y10S148/02 ,  Y10S148/049 ,  Y10S148/053 ,  Y10S148/122

Abstract: A Charge Coupled Device (CCD) structure employing two levels of electrode metallization. The field plate electrodes are arranged in pairs with the second one of each pair partially overlapping and insulated from the first one of its pair and the first one of the next pair. The structure can be operated two-phase or fourphase with four electrodes per bit and three-phase with three electrodes per bit by providing suitable amounts of electrode overlap and suitable drive circuitry. A particularly advantageous mode of two-phase operation with four electrodes per bit is enabled by providing asymmetrical overlapping of electrodes, the second electrode of each pair overlapping the first electrode of its pair more than the first electrode of the next pair.

公开(公告)号：US3925806A

公开(公告)日：1975-12-09

申请号：US52803074

申请日：1974-11-29

Applicant: BELL TELEPHONE LABOR INC

Inventor： STRAIN ROBERT JOSEPH ,  THORNBER KARVEL KUHN

IPC: G11C19/28 ,  G11C27/04 ,  H01L29/768 ,  H03H15/02 ,  H01L29/78

CPC classification number: H01L29/76816 ,  G11C19/285 ,  G11C27/04 ,  H03H15/02

Abstract: Distortion of signals in a semiconductor charge transfer device (CTD) section of N transfer stages, caused by incomplete transfer of electrical charges between successive stages in the device, is reduced by filtering the output signal of the device with an auxiliary CTD section serving as a filter for the N-stage CTD section. Advantageously, the ultimate (last) one of the stages in the auxiliary CTD section is built with an incomplete charge transfer coefficient characteristic which is substantially equal to the sum of the mutually substantially equal incomplete transfer characteristics of all other stages, both in the N-stage CTD section and in the other stages of the auxiliary CTD section. Thereby, the difference in transferred signal charge output from the ultimate and the penultimate (next to the last) auxiliary stages (at a selected time relative to the CTD time clock) yields a corrected output signal for the N-stage CTD section.

Abstract translation: 在设备的连续级之间的电荷的不完全传送引起的N个转移级的半导体电荷转移装置（CTD）部分中的信号失真通过用辅助CTD部分作为器件的器件的输出信号进行滤波来减少 滤波器用于N级CTD部分。 有利地，辅助CTD部分中的最后阶段的最后（最后一个）构建具有不完全的电荷传递系数特性，其基本上等于所有其它级的相互基本相等的不完全传递特性的和， 辅助CTD部分的其他阶段。 因此，从最终和倒数第二（下一个）辅助级（在相对于CTD时钟的选定时间）输出的传送信号电荷的差产生用于N级CTD部分的经校正的输出信号。