Abstract:
The intensity of a beam of neutral particles traveling at velocities of up to 3.4 X 107 cm/sec may be monitored by inserting a precalibrated target in the path of the beam, and measuring the intensity of photon emissions which result from collision of the particles with the target. The intensity of the beam is related to the intensity of the photon emissions by the calibration factor of the target material. The invention may be used, for example, in conjunction with neutral particle implantation techniques.
Abstract:
The spatial distribution of constituents and contaminants in a solid is determined either by (1) scanning the surface of the solid with a focused ion or neutral particle beam to sputter excited particles from the surface, resulting in photon emissions characteristic of the sputtered particles, and detecting the photon emissions over the scan period, or by (2) flooding the surface with a diffuse beam, and photographically recording the distribution of photon emissions. Continued sputtering results in removal of surface material and detection of the photon count rate or a sequence of photographs taken during each successive scan period indicates the distribution of constituents and contaminants in the bulk of the solid as a function of distance from the surface.
Abstract:
Doping of semiconductor bodies is achieved by bombarding the surface of the semiconductor with a beam of neutral particles to implant particles therein.
Abstract:
Efficiencies of sputtering of a material by bombardment with a particle beam are determined by: observing the time required for photon emissions characteristic of the particle sputtered from a film of known thickness of the material to disappear; or observing the time required for photon emissions characteristic of the substrate material to appear.