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公开(公告)号：US20240297283A1
公开(公告)日：2024-09-05
申请号：US18027553
申请日：2022-03-31
发明人： Yuanda Lu , Jiawei Zhao , Zhijun Xiong , Shanwei Yang , Xueqiao Li , Yuanhao Sun , Junjie Ma
IPC分类号： H01L33/62 , H01L25/075
CPC分类号： H01L33/62 , H01L25/0753
摘要： Provided is a light emitting diode chip, including: a base substrate; at least two light emitting units disposed on the base substrate, wherein the at least two light emitting units include adjacent first light emitting unit and second light emitting unit, and each of the first light emitting unit and the second light emitting unit includes: a first semiconductor layer disposed on the base substrate; a light emitting layer disposed on the first semiconductor layer away from the base substrate; and a second semiconductor layer disposed on the light emitting layer away from the base substrate, wherein the light emitting diode chip further includes a bridging part for conducting, and the bridging part is configured to electrically connect the second semiconductor layer of the first light emitting unit with the first semiconductor layer of the second light emitting unit.
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公开(公告)号：US20240339575A1
公开(公告)日：2024-10-10
申请号：US18293834
申请日：2022-11-30
发明人： Yuanda Lu , Junjie Ma , Yuanhao Sun , Jiawei Zhao , Zhijun Xiong , Xueqiao Li , Shanwei Yang , Yutian Chu , Linxia Qi
CPC分类号： H01L33/62 , H01L27/156 , H01L33/005 , H01L33/10 , H01L33/387
摘要： A light emitting diode chip, including at least two light emitting structures spaced apart and sequentially connected in series on a base substrate. At least one of the light emitting structures includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a first insulation layer, a current spreading layer and a first electrode stacked in sequence. The at least one light emitting structure includes a first via hole in the first insulation layer, the first electrode is electrically connected to the current spreading layer, and the current spreading layer is electrically connected to the second semiconductor layer through the first via hole. An orthographic projection of the first via hole on the base substrate falls within that of the current spreading layer, and the orthographic projection of the current spreading layer on the base substrate falls within that of the second semiconductor layer.
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