LIGHT EMITTING DIODE CHIP, DISPLAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20240297283A1

    公开(公告)日:2024-09-05

    申请号:US18027553

    申请日:2022-03-31

    IPC分类号: H01L33/62 H01L25/075

    CPC分类号: H01L33/62 H01L25/0753

    摘要: Provided is a light emitting diode chip, including: a base substrate; at least two light emitting units disposed on the base substrate, wherein the at least two light emitting units include adjacent first light emitting unit and second light emitting unit, and each of the first light emitting unit and the second light emitting unit includes: a first semiconductor layer disposed on the base substrate; a light emitting layer disposed on the first semiconductor layer away from the base substrate; and a second semiconductor layer disposed on the light emitting layer away from the base substrate, wherein the light emitting diode chip further includes a bridging part for conducting, and the bridging part is configured to electrically connect the second semiconductor layer of the first light emitting unit with the first semiconductor layer of the second light emitting unit.

    Light-Emitting Diode Chip, Display Substrate And Manufacturing Method Thereof

    公开(公告)号:US20220336706A1

    公开(公告)日:2022-10-20

    申请号:US17417493

    申请日:2020-09-29

    摘要: A light-emitting diode chip, a display substrate and a manufacturing method thereof are disclosed. The light-emitting diode chip includes a first conductive type semiconductor layer, a light-emitting layer, at least two second conductive type semiconductor layers, and at least two first electrodes; the at least two second conductive type semiconductor layers are at a side of the light-emitting layer away from the first conductive type semiconductor layer, the at least two first electrodes are electrically respectively connected with the at least two second conductive type semiconductor layers. Orthographic projections of the at least two second conductive type semiconductor layers on the first conductive type semiconductor layer are spaced apart from each other, and orthographic projections of the at least two first electrodes on the first conductive type semiconductor layer are spaced apart from each other.