公开(公告)号：US20160172608A1

公开(公告)日：2016-06-16

申请号：US14801309

申请日：2015-07-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yingtao XIE ,  Shihong OUYANG ,  Shucheng CAI ,  Qiang SHI ,  Ze LIU ,  Honhang FONG

IPC: H01L51/05 ,  H01L51/10 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0018 ,  H01L51/0541 ,  H01L51/0562

Abstract: The present disclosure provides a thin film transistor (TFT), its manufacturing method, an array substrate and a display device. The method for manufacturing the TFT includes steps of forming patterns of a gate electrode, a source electrode and a drain electrode on a base substrate; and forming a pattern of an active layer and a pattern of a passivation layer covering the active layer by a single patterning process. The passivation layer is made of a negative or positive photoresist, and the active layer is insulated from the gate electrode and electrically connected to the source electrode and the drain electrode.

Abstract translation: 本公开提供一种薄膜晶体管（TFT），其制造方法，阵列基板和显示装置。 制造TFT的方法包括在基底基板上形成栅电极，源电极和漏电极的图案的步骤; 以及通过单个图案化工艺形成活性层的图案和覆盖有源层的钝化层的图案。 钝化层由负极或正性光致抗蚀剂制成，有源层与栅电极绝缘并与源电极和漏电极电连接。

公开(公告)号：US20160268527A1

公开(公告)日：2016-09-15

申请号：US14769313

申请日：2014-11-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Honhang FONG ,  Yingtao XIE ,  Shihong OUYANG ,  Shucheng CAI ,  Qiang SHI ,  Ze LIU

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/105 ,  H01L51/0018 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/107

Abstract: An organic thin film transistor and a method of manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor including: a source electrode (4), a drain electrode (5), an organic semiconductor layer (6) disposed on the source electrode (4) and drain electrode (5), and a modified layer (7); the modified layer (7) is disposed at a position below an organic semiconductor layer (6) and corresponding to the source electrode (4) and the drain electrode (5), covers the source electrode (4) and the drain electrode (5), and is configured to change a contact angle on both the source electrode (4) and the drain electrode (5). The thin film transistor avoids the problems of poor formation effects and easy disconnection of the organic semiconductor layer (6) because of the large contact angle on electrode layers, and therefore reduces production costs.

Abstract translation: 公开了一种有机薄膜晶体管及其制造方法，阵列基板和显示装置。 该薄膜晶体管包括：源电极（4），漏电极（5），设置在源电极（4）和漏电极（5）上的有机半导体层（6）和改性层（7）; 改性层（7）设置在有机半导体层（6）的下方，与源电极（4）和漏电极（5）对应的位置，覆盖源电极（4）和漏电极（5） 并且被配置为改变源电极（4）和漏电极（5）两者的接触角。 薄膜晶体管避免了由于电极层上的大的接触角而导致有机半导体层（6）的形成效果差和容易断开的问题，因此降低了生产成本。

公开(公告)号：US20160276606A1

公开(公告)日：2016-09-22

申请号：US14769670

申请日：2014-11-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Honhang FONG ,  Yingtao XIE ,  Shihong OUYANG ,  Shucheng CAI ,  Qiang SHI ,  Ze LIU

IPC: H01L51/05 ,  H01L29/786 ,  H01L29/66 ,  H01L51/10 ,  H01L27/28

CPC classification number: H01L51/0516 ,  H01L27/12 ,  H01L27/283 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/105

Abstract: A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode (3) and a gate insulation layer (2), the gate insulation layer (2) is provided with a recess (4) at a position corresponding to the gate electrode (3). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.

Abstract translation: 公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置，薄膜​​晶体管为栅极底部接触型，并且包括栅极（3）和栅极绝缘层（2），栅极 绝缘层（2）在对应于栅极（3）的位置处设置有凹部（4）。 利用薄膜晶体管，可以避免在源极/漏极之间的沟道处的有源层中的断线的问题，提高了薄膜晶体管的性能和稳定性，并且降低了生产成本。

公开(公告)号：US20160254467A1

公开(公告)日：2016-09-01

申请号：US14764453

申请日：2014-12-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Honhang FONG ,  Yingtao XIE ,  Shihong OUYANG ,  Shucheng CAI ,  Qiang SHI ,  Ze LIU

IPC: H01L51/05 ,  H01L27/32 ,  H01L27/28 ,  H01L51/10 ,  H01L51/00

CPC classification number: H01L51/0541 ,  H01L27/283 ,  H01L27/3274 ,  H01L51/0018 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/105

Abstract: An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode (12a) and a drain electrode (12b), and forming an organic semiconductor active layer (13) in contact with the source electrode (12a) and the drain electrode (12b); and forming an organic insulating thin film (140) on a substrate (10) where the source-drain metal layer and the organic semiconductor active layer (13) have been formed, thinning the organic insulating thin film (140) and curing the thinned organic insulating thin film (140), or curing the organic insulating thin film (140) and thinning the cured organic insulating thin film (140), to form an organic insulating layer (14). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.

Abstract translation: 一种有机薄膜晶体管及其制备方法，阵列基板及其制备方法和显示装置; 并且有机薄膜晶体管的制备方法包括：形成包括源电极（12a）和漏电极（12b）的源极 - 漏极金属层，并形成与源极接触的有机半导体活性层（13） （12a）和漏电极（12b）; 在所述源极 - 漏极金属层和所述有机半导体有源层已经形成的衬底上形成有机绝缘薄膜，使所述有机绝缘薄膜变薄，并将所述有机绝缘薄膜固化） 绝缘薄膜（140），或固化有机绝缘薄膜（140），使固化的有机绝缘薄膜（140）变薄，形成有机绝缘层（14）。 该方法可用于形成薄而均匀的有机绝缘层，因此减少了形成通孔的技术难点。