PACKAGING METHOD WITH FILMS, FILM PACKAGE STRUCTURE AND DISPLAY DEVICE
    2.
    发明申请
    PACKAGING METHOD WITH FILMS, FILM PACKAGE STRUCTURE AND DISPLAY DEVICE 有权
    包装方法,膜片,胶片包装结构和显示装置

    公开(公告)号:US20170047543A1

    公开(公告)日:2017-02-16

    申请号:US14908395

    申请日:2015-07-23

    Inventor: Wenwen SUN

    Abstract: The present disclosure provides a packaging method with films, a film package structure and a display device, which can effectively prevent water and oxygen from invading into a display unit and improve the bending resistance of the display unit. The method comprises: step 1, placing an device to be packaged in a PECVD device, and setting a mask plate to expose a packaging region of the device and mask a region of the device that does not need to be packaged; step 2, adjusting a gas that is passed into the PECVD device, and depositing a layer of inorganic silicon material film; step 3, adjusting N2 gas that is passed into the PECVD device, and depositing a layer of organosilane film on the layer of the inorganic silicon material film using an organic material that reacts with the inorganic silicon material.

    Abstract translation: 本公开提供了一种具有膜,膜封装结构和显示装置的封装方法,其可以有效地防止水和氧侵入显示单元并提高显示单元的抗弯曲性。 该方法包括:步骤1,将待包装的装置放置在PECVD装置中,并设置掩模板以暴露装置的包装区域并遮蔽不需要包装的装置的区域; 步骤2,调节进入PECVD装置的气体,以及沉积无机硅材料膜层; 步骤3,调节通入PECVD器件的N 2气体,并使用与无机硅材料反应的有机材料在无机硅材料膜的层上沉积一层有机硅烷膜。

    Thin Film Transistor, Array Substrate and Display Device
    3.
    发明申请
    Thin Film Transistor, Array Substrate and Display Device 审中-公开
    薄膜晶体管,阵列基板和显示装置

    公开(公告)号:US20160276491A1

    公开(公告)日:2016-09-22

    申请号:US14761862

    申请日:2015-01-07

    Inventor: Wenwen SUN

    CPC classification number: H01L29/78636 H01L27/1214 H01L29/42384 H01L29/4908

    Abstract: The present invention discloses a thin film transistor (TFT), an array substrate comprising the TFT and a display device comprising the array substrate. The TFT comprises a gate, a source, a drain, and a semiconductor layer and an insulating layer which are both provided between the source, the drain and the gate, the insulating layer is made of inorganic insulating material, a modifying layer is provided between the insulating layer and the semiconductor layer and in an area corresponding to the insulating layer, and the modifying layer is made of organic aliphatic silane material. The surface of the insulating layer of the TFT is smoother with a state of less or substantially no surface defects.

    Abstract translation: 本发明公开了一种薄膜晶体管(TFT),包括TFT的阵列基板和包括阵列基板的显示装置。 TFT包括设置在源极,漏极和栅极之间的栅极,源极,漏极,半导体层和绝缘层,绝缘层由无机绝缘材料制成,修饰层设置在 绝缘层和半导体层,并且在与绝缘层相对应的区域中,改性层由有机脂族硅烷材料制成。 TFT的绝缘层的表面更平滑,具有较少或基本上没有表面缺陷的状态。

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