公开(公告)号：US20220399465A1

公开(公告)日：2022-12-15

申请号：US17599688

申请日：2020-12-21

申请人： BOE Technology Group Co., Ltd.

发明人： Feng Guan ,  Yichi Zhang ,  Yang Lv

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/45

摘要： A thin film transistor is provided. The thin film transistor includes abase substrate; a gate electrode on the base substrate; an active layer on the base substrate, the active layer including a polycrystalline silicon part including a polycrystalline silicon material and an amorphous silicon part including an amorphous silicon material; a gate insulating layer insulating the gate electrode from the active layer; a source electrode and a drain electrode on the base substrate; and an etch stop layer on a side of the polycrystalline silicon part away from the base substrate. An orthographic projection of the etch stop layer on the base substrate covers an orthographic projection of the polycrystalline silicon part on the base substrate, and an orthographic projection of at least a portion of the amorphous silicon part on the base substrate.

公开(公告)号：US10923505B2

公开(公告)日：2021-02-16

申请号：US16535447

申请日：2019-08-08

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Feng Guan ,  Lu Wang ,  Woobong Lee ,  Jianhua Du ,  Yang Lv ,  Zhaohui Qiang ,  Guangcai Yuan

IPC分类号： H01L27/12

摘要： The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.

公开(公告)号：US11469336B2

公开(公告)日：2022-10-11

申请号：US16958120

申请日：2020-01-17

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jianhua Du ,  Chao Li ,  Zhaohui Qiang ,  Yupeng Gao ,  Feng Guan ,  Rui Huang ,  Zhi Wang ,  Yang Lv ,  Chao Luo

IPC分类号： H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

摘要： The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US11817460B2

公开(公告)日：2023-11-14

申请号：US17263748

申请日：2020-03-27

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Chao Luo ,  Feng Guan ,  Zhi Wang ,  Jianhua Du ,  Yang Lv ,  Zhaohui Qiang ,  Chao Li

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1237 ,  H01L27/1222 ,  H01L27/1285 ,  H01L29/66477 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

摘要： A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.

公开(公告)号：US11251208B2

公开(公告)日：2022-02-15

申请号：US16642734

申请日：2019-03-18

申请人： BOE Technology Group Co., Ltd.

发明人： Chao Li ,  Jianhua Du ,  Feng Guan ,  Zhaohui Qiang ,  Zhi Wang ,  Yupeng Gao ,  Yang Lv

IPC分类号： H01L27/144 ,  H01L27/12 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18

摘要： A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.

公开(公告)号：US20210151476A1

公开(公告)日：2021-05-20

申请号：US16642734

申请日：2019-03-18

申请人： BOE Technology Group Co., Ltd.

发明人： Chao Li ,  Jianhua Du ,  Feng Guan ,  Zhaohui Qiang ,  Zhi Wang ,  Yupeng Gao ,  Yang Lv

IPC分类号： H01L27/144 ,  H01L31/105 ,  H01L31/0352 ,  H01L27/12 ,  H01L31/18

摘要： A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.