-
公开(公告)号：US20230141443A1
公开(公告)日：2023-05-11
申请号：US17772595
申请日：2021-05-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wei Li , Yichi ZHANG , Can ZHANG , Can WANG , Lijun YUAN , Ning CONG , Jinfei NIU , Jingjing ZHANG , Minghua XUAN
IPC: H10K59/38 , H10K59/122 , H10K59/12
CPC classification number: H10K59/38 , H10K59/122 , H10K59/1201
Abstract: The present disclosure provides a display panel, having a light emitting layer, a transparent spacing layer on the light emitting layer, and a wavelength converting layer on the transparent spacing layer, wherein according to the luminance change ratios of the wavelength converting units of adjacent pixels and the light path property of the transparent spacing layer, the cross color issue in wavelength-conversion type display panels is at least partially solved by controlling the intensity proportions of the light arriving at the wavelength converting units of adjacent sub-pixels within a certain range.
-
公开(公告)号：US20220403230A1
公开(公告)日：2022-12-22
申请号：US17421223
申请日：2020-10-30
Inventor： Dong LI , Yichi ZHANG
Abstract: Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.
-
公开(公告)号：US20220320454A1
公开(公告)日：2022-10-06
申请号：US17419820
申请日：2020-09-23
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenhai MEI , Yichi ZHANG
Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.
-
4.发明申请公开(公告)号：US20220140271A1
公开(公告)日：2022-05-05
申请号：US17465698
申请日：2021-09-02
Inventor： Dong LI , Yichi ZHANG
Abstract: Disclosed are a quantum dot material, a quantum dot light emitting device, a display apparatus and a manufacturing method. The quantum dot material includes: a quantum dot, an anionic ligand, and a linking group linking the quantum dot and the anionic ligand, wherein the anionic ligand is configured to bind to a ring molecule by electrostatic force.
-
5.发明申请公开(公告)号：US20220098051A1
公开(公告)日：2022-03-31
申请号：US17478061
申请日：2021-09-17
Inventor： Aidi ZHANG , Yichi ZHANG
Abstract: Disclosed are a quantum dot light emitting device and a manufacturing method thereof as well as a display apparatus. The quantum dot light emitting device includes: a substrate; a pixel definition layer, wherein the pixel definition layer includes a plurality of pixel openings and pixel partition bodies, and a surface of each pixel partition body has a hydroxide radical; a quantum dot layer, located in the pixel openings; and a polymer structure sealing the quantum dot layer in the pixel openings, wherein the polymer structure is a of fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer.
-
Patent Agency Ranking
公开(公告)号：US20250046263A1
公开(公告)日：2025-02-06
申请号：US18618985
申请日：2024-03-27
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yuzhen GUO , Baoxi WANG , Haoliang ZHENG , Li XIAO , Lipeng GAO , Jiao ZHAO , Xiaorong CUI , Yichi ZHANG
IPC: G09G3/34
Abstract: Disclosed are a display panel, a driving method thereof, and a display apparatus. The display panel has a plurality of first region groups arranged in a first direction and extending in a second direction. The first region group internally includes a plurality of first signal lines arranged in the first direction. A non-display region includes: a plurality of second signal lines, and a plurality of first multiplexers in one-to-one correspondence with the plurality of first region groups and sharing the plurality of second signal lines. The first multiplexers are connected to the first signal lines in the corresponding first region groups one to one. The first signal lines are electrically connected to pixel sub-electrodes in pixels arranged in the second direction.
-
公开(公告)号：US20240237389A1
公开(公告)日：2024-07-11
申请号：US18617524
申请日：2024-03-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingwen FENG , Yichi ZHANG
IPC: H10K50/16 , H10K50/115 , H10K71/00 , H10K102/00
CPC classification number: H10K50/166 , H10K50/115 , H10K71/00 , H10K2102/00 , H10K2102/351
Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.
-
公开(公告)号：US20240177675A1
公开(公告)日：2024-05-30
申请号：US17793376
申请日：2021-06-24
Inventor： Pan LI , Yichi ZHANG
IPC: G09G3/3258 , G09G3/3275
CPC classification number: G09G3/3258 , G09G3/3275 , G09G2300/0426 , G09G2300/0842 , G09G2310/061 , G09G2310/08
Abstract: A display substrate includes: a base, and pixel units arranged in an array, each pixel unit including at least two sub-pixels each including: a pixel driving circuit, and a light-emitting element. The light-emitting element includes: a first electrode, a light-emitting layer, and a second electrode arranged on the base sequentially. Each sub-pixel is configured with a corresponding operating voltage transmission line. The pixel driving circuit includes: a driving transistor with a first pole electrically connected to the operating voltage transmission line. The operating voltage transmission line is located between a layer structure where a control pole of the driving transistor is located and a layer structure where the first electrode is located. The at least two sub-pixels include: at least one first sub-pixel and at least one second sub-pixel. The first and second sub-pixels are configured with first and second operating voltage transmission lines insulated from each other, respectively.
-
公开(公告)号：US20230030379A1
公开(公告)日：2023-02-02
申请号：US17757886
申请日：2021-09-10
Inventor： Xinle WANG , Yifan SONG , Yichi ZHANG , Yilin FENG , Wenchao HAN , Wei SUN
IPC: H01L27/146 , H01L29/786 , H01L29/66
Abstract: A peripheral area of the display panel is provided with a photosensitive TFT structure, the photosensitive TFT structure includes a reference TFT unit and a photosensitive TFT unit, first electrodes of a reference TFT included in the reference TFT unit and a photosensitive TFT included in the photosensitive TFT unit are connected to a signal input terminal of the photosensitive TFT structure; a second electrode of the reference TFT is connected to a second signal line of the photosensitive TFT structure; a second electrode of the photosensitive TFT is connected to a third signal line of the photosensitive TFT structure; a gate electrode of the reference TFT is connected to a first control terminal of the photosensitive TFT structure, and a gate electrode of the photosensitive TFT is connected to a second control terminal of the photosensitive TFT structure.
-
公开(公告)号：US20220123248A1
公开(公告)日：2022-04-21
申请号：US17458782
申请日：2021-08-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingwen FENG , Yichi ZHANG
Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.
-
-
-
-
-
-
-
-
-
Search Results
44
records
(took 0.018 seconds)
