DISPLAY PANEL, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE

    公开(公告)号:US20230030379A1

    公开(公告)日:2023-02-02

    申请号:US17757886

    申请日:2021-09-10

    摘要: A peripheral area of the display panel is provided with a photosensitive TFT structure, the photosensitive TFT structure includes a reference TFT unit and a photosensitive TFT unit, first electrodes of a reference TFT included in the reference TFT unit and a photosensitive TFT included in the photosensitive TFT unit are connected to a signal input terminal of the photosensitive TFT structure; a second electrode of the reference TFT is connected to a second signal line of the photosensitive TFT structure; a second electrode of the photosensitive TFT is connected to a third signal line of the photosensitive TFT structure; a gate electrode of the reference TFT is connected to a first control terminal of the photosensitive TFT structure, and a gate electrode of the photosensitive TFT is connected to a second control terminal of the photosensitive TFT structure.

    QUANTUM DOT LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL

    公开(公告)号:US20220123248A1

    公开(公告)日:2022-04-21

    申请号:US17458782

    申请日:2021-08-27

    IPC分类号: H01L51/50 H01L51/56

    摘要: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

    QUANTUM DOT FILM, QUANTUM DOT DEVICE, AND DISPLAY PANEL

    公开(公告)号:US20220073816A1

    公开(公告)日:2022-03-10

    申请号:US17246833

    申请日:2021-05-03

    IPC分类号: C09K11/56 G02B5/20 G02B1/04

    摘要: The present disclosure provides a quantum dot film, a quantum dot device, and a display panel. The provided quantum dot film comprises a plurality of quantum dots and a plurality of polymer molecular chains. The polymer molecule chain comprises at least one first segment and at least one second segment, wherein the first segment has a tensile modulus greater than that of the second segment, and the second segment has a flexural modulus less than that of the first segment.

    QUANTUM DOT MATERIAL AND RELATED APPLICATIONS

    公开(公告)号:US20220403230A1

    公开(公告)日:2022-12-22

    申请号:US17421223

    申请日:2020-10-30

    发明人: Dong LI Yichi ZHANG

    IPC分类号: C09K11/02 H01L51/50 H01L51/56

    摘要: Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.

    QUANTUM DOT LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND DISPLAY APPARATUS

    公开(公告)号:US20220320454A1

    公开(公告)日:2022-10-06

    申请号:US17419820

    申请日:2020-09-23

    IPC分类号: H01L51/50 H01L51/56

    摘要: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.

    QUANTUM DOT LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF AS WELL AS DISPLAY APPARATUS

    公开(公告)号:US20220098051A1

    公开(公告)日:2022-03-31

    申请号:US17478061

    申请日:2021-09-17

    IPC分类号: C01G9/02 H01L51/00

    摘要: Disclosed are a quantum dot light emitting device and a manufacturing method thereof as well as a display apparatus. The quantum dot light emitting device includes: a substrate; a pixel definition layer, wherein the pixel definition layer includes a plurality of pixel openings and pixel partition bodies, and a surface of each pixel partition body has a hydroxide radical; a quantum dot layer, located in the pixel openings; and a polymer structure sealing the quantum dot layer in the pixel openings, wherein the polymer structure is a of fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer.

    DISPLAY ASSEMBLY AND DISPLAY DEVICE

    公开(公告)号:US20230129444A1

    公开(公告)日:2023-04-27

    申请号:US17914494

    申请日:2021-09-07

    IPC分类号: G02B1/14 G09F9/30 G06F1/16

    摘要: Provided are a display assembly and a display device. The display assembly includes a flexible display panel comprising a stretchable display area, a breakable area and a bonding area connected in sequence; a first support film on a side of the stretchable display area; and a second support film on a side of the bonding area, the second support film and the first support film being on a same side of the flexible display panel. An elongation of the first support film is greater than an elongation of the second support film, and a hardness of the first support film is less than a hardness of the second support film.

    ACOUSTIC TRANSDUCER UNIT, METHOD FOR MANUFACTURING THE SAME, AND ACOUSTIC TRANSDUCER

    公开(公告)号:US20220379345A1

    公开(公告)日:2022-12-01

    申请号:US17772263

    申请日:2021-05-20

    IPC分类号: B06B1/02 H04R19/00

    摘要: The present disclosure provides an acoustic transducer unit and a manufacturing method thereof, and an acoustic transducer, the acoustic transducer unit includes: a base substrate; a first electrode on the base substrate; a support pattern on a side of the first electrode away from the base substrate, which is enclosed into an accommodation groove, at least one release groove and at least one connection groove, an orthographic projection of the release groove on the base substrate is spaced apart from that of the accommodation groove on the base substrate, the connection groove is between the accommodation groove and the release groove to communicate them; a diaphragm pattern on the side of the first electrode away from the base substrate and capable of vibrating in the accommodation groove; a filling pattern in the release groove; a second electrode on a side of the diaphragm pattern away from the base substrate.