LIGHT-EMITTING SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING APPARATUS

    公开(公告)号:US20220310957A1

    公开(公告)日:2022-09-29

    申请号:US17611930

    申请日:2020-10-28

    Abstract: A light-emitting substrate includes a base; a first material layer and a second material layer that are disposed on the base, and an etch stop layer between the first material layer and the second material layer. The first material layer is closer to the base than the second material layer. The second material layer includes a plurality of patterns, and each pattern and the first material layer have an overlapping region therebetween. The etch stop layer includes at least portions in respective overlapping regions. A portion of the etch stop layer located in each overlapping region is in contact with the first material layer and the second material layer. Energy level(s) of the portion of the etch stop layer located in each overlapping region are matched with energy levels of the first material layer and the second material layer at corresponding positions.

    Display panel and method for manufacturing the same, display apparatus

    公开(公告)号:US20240243234A1

    公开(公告)日:2024-07-18

    申请号:US18273300

    申请日:2021-10-11

    Inventor: Zhigao LU

    CPC classification number: H01L33/502 H01L25/0753 H01L33/0095 H01L2933/0016

    Abstract: The present disclosure provides a display panel and a display apparatus. The display panel includes a first electrode layer, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, and a second electrode layer, which are sequentially stacked, a material of the hole injection layer includes a first metal oxide and a second metal oxide, which contain the same metal element, the number of outermost electrons of the metal element in the first metal oxide is different from the number of outermost electrons of the metal in the second metal oxide. In addition, the hole injection layer further includes a metal M and a third metal oxide MOy, the third metal oxide MOy is formed by an oxidation-reduction reaction between the metal M and the first metal oxide. The hole injection layer may be of a single layer or a multi-layer structure.

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