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公开(公告)号：US11710747B2
公开(公告)日：2023-07-25
申请号：US16340606
申请日：2018-09-29
发明人： Fang Yan , Dawei Shi , Lei Yao , Zifeng Wang , Wentao Wang , Lu Yang , Haifeng Xu , Xiaowen Si , Jinfeng Wang , Lei Yan , Jinjin Xue , Lin Hou
IPC分类号： H01L27/12 , G02F1/1362 , G02F1/1343 , G02F1/1368
CPC分类号： H01L27/124 , G02F1/1368 , G02F1/13439 , G02F1/134345 , G02F1/136222 , H01L27/1259
摘要： An array substrate, a manufacturing method thereof and a display device are provided. The array substrate includes: a base substrate; a first electrode located on the base substrate and including a pad portion, the pad portion including a first surface and a second surface, the second surface being closer to the base substrate than the first surface; a first insulation layer located on the first electrode and including a first via hole; a second insulation layer located on the first insulation layer and including a second via hole; and a second electrode located on the second insulation layer; the second electrode is electrically connected with the first electrode at the pad portion through the first via hole and the second via hole, and an orthographic projection of the pad portion on the base substrate falls within an orthographic projection of the second via hole on the base substrate.
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公开(公告)号：US20210249450A1
公开(公告)日：2021-08-12
申请号：US17243817
申请日：2021-04-29
发明人： Jinjin Xue , Dawei Shi , Feng Li , Lei Yao , Wentao Wang , Haifeng Xu , Lu Yang , Lin Hou , Jinfeng Wang , Mei Li , Yezhou Fang
IPC分类号： H01L27/12 , G02F1/1368 , G02F1/1343 , G02F1/1362
摘要： An array substrate and a method for manufacturing the same, and a display device are provided. The array substrate includes a base substrate and the array substrate includes a plurality of pixel units. In each of the plurality of pixel units, the array substrate includes a thin film transistor and a storage capacitor disposed above the base substrate, the storage capacitor includes a metal layer, an intermediate layer, and a reflective layer disposed in a stacked manner, the metal layer being adjacent to the base substrate. The array substrate further includes a common electrode layer disposed on a side of the storage capacitor facing away from the base substrate, the reflective layer is electrically connected to the common electrode layer, and the metal layer is electrically connected to an active layer of the thin film transistor.
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公开(公告)号：US11031419B2
公开(公告)日：2021-06-08
申请号：US16382679
申请日：2019-04-12
发明人： Jinjin Xue , Dawei Shi , Feng Li , Lei Yao , Wentao Wang , Haifeng Xu , Lu Yang , Lin Hou , Jinfeng Wang , Mei Li , Yezhou Fang
IPC分类号： H01L27/12 , G02F1/1343 , G02F1/1368 , G02F1/1362
摘要： Embodiments of the present disclosure provide an array substrate, a method for manufacturing the same, and a display device. The array substrate includes a base substrate and the array substrate includes a plurality of pixel units. In each of the plurality of pixel units, the array substrate includes a thin film transistor and a storage capacitor disposed above the base substrate, the storage capacitor includes a metal layer, an intermediate layer, and a reflective layer disposed in a stacked manner, the metal layer being adjacent to the base substrate. The array substrate further includes a common electrode layer disposed on a side of the storage capacitor facing away from the base substrate, the reflective layer is electrically connected to the common electrode layer, and the metal layer is electrically connected to an active layer of the thin film transistor.
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公开(公告)号：US10795228B2
公开(公告)日：2020-10-06
申请号：US16121968
申请日：2018-09-05
发明人： Lei Yao , Dawei Shi , Wentao Wang , Lu Yang , Haifeng Xu , Lei Yan , Jinfeng Wang , Xiaowen Si , Fang Yan , Jinjin Xue , Lin Hou , Yuanbo Li , Zhixuan Guo , Xiaofang Li
IPC分类号： H01L29/786 , H01L51/52 , H01L21/027 , H01L27/12 , H01L27/32 , H01L51/56 , H01L21/3213 , H01L29/66 , G02F1/1362 , G02F1/1335 , G02F1/1368
摘要： The present disclosure provides an array substrate, a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and gate lines and data lines arranged on the base substrate to define a plurality of pixel regions, and a diffuse reflection layer arranged in the plurality of pixel regions, in which a surface of the diffuse reflection layer facing a light emitting side of the array substrate is uneven.
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公开(公告)号：US20200091203A1
公开(公告)日：2020-03-19
申请号：US16382679
申请日：2019-04-12
发明人： Jinjin Xue , Dawei Shi , Feng Li , Lei Yao , Wentao Wang , Haifeng Xu , Lu Yang , Lin Hou , Jinfeng Wang , Mei Li , Yezhou Fang
IPC分类号： H01L27/12 , G02F1/1368 , G02F1/1343
摘要： Embodiments of the present disclosure provide an array substrate, a method for manufacturing the same, and a display device. The array substrate includes a base substrate and the array substrate includes a plurality of pixel units. In each of the plurality of pixel units, the array substrate includes a thin film transistor and a storage capacitor disposed above the base substrate, the storage capacitor includes a metal layer, an intermediate layer, and a reflective layer disposed in a stacked manner, the metal layer being adjacent to the base substrate. The array substrate further includes a common electrode layer disposed on a side of the storage capacitor facing away from the base substrate, the reflective layer is electrically connected to the common electrode layer, and the metal layer is electrically connected to an active layer of the thin film transistor.
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公开(公告)号：US10355097B2
公开(公告)日：2019-07-16
申请号：US15710133
申请日：2017-09-20
发明人： Lu Yang , Wentao Wang , Xiaowen Si , Haifeng Xu , Jinfeng Wang , Lei Yan , Lei Yao , Feng Li
IPC分类号： H01L29/423 , H01L27/12 , H01L29/66 , H01L29/786
摘要： The present disclosure provides a thin film transistor (TFT), an array substrate, a display panel and a display device. The TFT includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an active layer arranged on a base substrate, wherein there is a plurality of overlapping regions separated from each other where a projection of the gate electrode on the base substrate and a projection of the active layer on the base substrate overlap each other.
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公开(公告)号：US20190165001A1
公开(公告)日：2019-05-30
申请号：US16011901
申请日：2018-06-19
发明人： Lei Yao , Dawei Shi , Wentao Wang , Lu Yang , Haifeng Xu , Lei Yan , Jinfeng Wang , Xiaowen Si , Fang Yan , Jinjin Xue , Lin Hou , Zhixuan Guo , Yuanbo Li , Xiaofang Li
IPC分类号： H01L27/12 , H01L29/423 , H01L29/417 , G02F1/1368
摘要： An array substrate, a method of manufacturing the same, and a display panel are provided, the array substrate includes a base substrate, and a pixel unit on the base substrate; and a reflective layer disposed on the base substrate and located in a portion of a region of the pixel unit, a surface of the reflective layer facing away from the base substrate includes a rugged structure.
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公开(公告)号：US20240222511A1
公开(公告)日：2024-07-04
申请号：US17907790
申请日：2021-09-29
发明人： Haidong Su , Feng Li , Yezhou Fang , Lei Yao , Lei Yan , Chenglong Wang , Kai Li , Xiaogang Zhu , Hua Yang , Lin Hou , Yun Gao
IPC分类号： H01L29/786 , H01L21/265 , H01L21/306 , H01L27/12 , H01L29/66
CPC分类号： H01L29/78621 , H01L29/66765 , H01L29/78669 , H01L21/26513 , H01L21/30604 , H01L27/1229
摘要： Provided is an amorphous silicon thin-film transistor including an amorphous silicon semiconductor layer, a source electrode, and a drain electrode that are successively disposed on a base substrate. Ions doped by an ion implantation process are present in a region, proximal to the source electrode and the drain electrode, of the amorphous silicon semiconductor layer. A concentration of the ions in a surface region, proximal to the source electrode and the drain electrode, of the amorphous silicon semiconductor layer is greater than or equal to 5*10{circumflex over ( )}20 atoms/cc.
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公开(公告)号：US11791278B2
公开(公告)日：2023-10-17
申请号：US17483822
申请日：2021-09-24
发明人： Lei Yao , Feng Li , Lei Yan , Kai Li , Chenglong Wang , Teng Ye , Lin Hou , Xiaofang Li
IPC分类号： H01L23/544 , H01L27/12
CPC分类号： H01L23/544 , H01L27/1248 , H01L27/1259 , H01L2223/54426
摘要： Provided are a display substrate motherboard and manufacturing method thereof, a display substrate and a display apparatus. The display substrate motherboard includes a substrate, a display substrate area on the substrate, and a mark area on the periphery of the display substrate area. The display substrate motherboard also includes a thin film transistor disposed in the display substrate area, a mark structure disposed in the mark area and a planarization layer disposed on one side of the thin film transistor away from the substrate, and the planarization layer includes a groove which is disposed at the corresponding position of the mark structure and extends along a direction close to the substrate, and an orthographic projection of the groove on the substrate covers an orthographic projection of the mark structure on the substrate.
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公开(公告)号：US11637134B2
公开(公告)日：2023-04-25
申请号：US17243817
申请日：2021-04-29
发明人： Jinjin Xue , Dawei Shi , Feng Li , Lei Yao , Wentao Wang , Haifeng Xu , Lu Yang , Lin Hou , Jinfeng Wang , Mei Li , Yezhou Fang
IPC分类号： H01L27/12 , G02F1/1343 , G02F1/1368 , G02F1/1362
摘要： An array substrate and a method for manufacturing the same, and a display device are provided. The array substrate includes a base substrate and the array substrate includes a plurality of pixel units. In each of the plurality of pixel units, the array substrate includes a thin film transistor and a storage capacitor disposed above the base substrate, the storage capacitor includes a metal layer, an intermediate layer, and a reflective layer disposed in a stacked manner, the metal layer being adjacent to the base substrate. The array substrate further includes a common electrode layer disposed on a side of the storage capacitor facing away from the base substrate, the reflective layer is electrically connected to the common electrode layer, and the metal layer is electrically connected to an active layer of the thin film transistor.
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