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公开(公告)号：US20170205953A1
公开(公告)日：2017-07-20
申请号：US15233408
申请日：2016-08-10
发明人： Chaochao SUN , Huafeng LIU , Shengwei ZHAO , Kai ZHANG , Lei YANG , Lulu YE , Jingping LV , Chao WANG , Chongliang HU , Meng YANG , Duolong DING , Bule SHUN , Lin XIE , Yao LI , Shimin SUN
IPC分类号： G06F3/041 , G02F1/1362 , G09G3/36 , H01L27/12 , G06F3/044
摘要： The present disclosure provides an array substrate, its driving method and manufacturing method, and a display device. The array substrate includes a transistor layer arranged on a base, and a first transparent conductive layer, a first insulation layer, a second transparent conductive layer, a second insulation layer and a third transparent conductive layer sequentially arranged on the transistor layer. The first transparent conductive layer covers the transistor layer at a display area, the second transparent conductive layer includes a pattern of touch electrodes, and the third transparent conductive layer includes a pattern of pixel electrodes. Within any pixel area of the display area, the pixel electrode is connected to a pixel electrode connection end of the transistor layer through a via-hole in the first insulation layer and the second insulation layer, and the first transparent conductive layer is provided with an opening at a position corresponding to the via-hole.
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2.发明申请公开(公告)号：US20170329163A1
公开(公告)日：2017-11-16
申请号：US15521471
申请日：2015-12-31
发明人： Lulu YE , Huafeng LIU , Jingping LV , Lei YANG , Meng YANG , Kai ZHANG , Chao WANG , Chaochao SUN , Shengwei ZHAO
IPC分类号： G02F1/1368 , H01L27/32 , H01L27/12 , H01L21/77 , G02F1/1362 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/134363 , G02F1/136227 , H01L21/77 , H01L27/124 , H01L27/32 , H01L27/3244 , H01L27/3262
摘要： Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.
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3.发明申请公开(公告)号：US20170075160A1
公开(公告)日：2017-03-16
申请号：US14913187
申请日：2015-09-18
发明人： Meng YANG
IPC分类号： G02F1/1333
CPC分类号： G02F1/133308 , G02F1/133385 , G02F2001/133317 , G02F2001/133322 , G02F2001/133325 , G02F2001/133331
摘要： The present invention provides a surface frame for a display module, a display module and a display device. The surface frame comprises a first support portion for supporting an optical film and a light guide plate and arranged surrounding three edges of the optical film and the light guide plate; a second support portion for supporting a liquid crystal panel and arranged surrounding three edges of the liquid crystal panel; a side frame connected to a rear shell; and a connection portion for connecting the side frame to outer sides of the first support portion and the second support portion.
摘要翻译： 本发明提供了一种用于显示模块，显示模块和显示装置的表面框架。 表面框架包括用于支撑光学膜的第一支撑部分和导光板，并且布置成围绕光学膜和导光板的三个边缘; 用于支撑液晶面板并且布置在液晶面板的三个边缘周围的第二支撑部分; 连接到后壳的侧框架; 以及用于将侧框架连接到第一支撑部分和第二支撑部分的外侧的连接部分。
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公开(公告)号：US20200241369A1
公开(公告)日：2020-07-30
申请号：US15769640
申请日：2017-08-07
发明人： Duolong DING , Huafeng LIU , Shengwei ZHAO , Chaochao SUN , Chao WANG , Jingping LV , Meng YANG , Lei YANG , Chongliang HU , Lin XIE , Bule SHUN , Shimin SUN
IPC分类号： G02F1/1362
摘要： A pixel structure and a manufacturing method thereof, an array substrate and a display device are provided. The pixel structure includes: a signal line; a common electrode line an extension direction of which is same as an extension direction of the signal line; a transistor including a semiconductor layer which includes a source region and a drain region; a first storage electrode which is insulated from the common electrode line and is connected with the drain region of the semiconductor layer; and a second storage electrode which is connected with the common electrode line and is insulated from the first storage electrode. In the pixel structure, portions, between the signal line and the common electrode line, of the first storage electrode and the second storage electrode includes overlap with each other to form a first storage capacitance.
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