公开(公告)号：US20140225252A1

公开(公告)日：2014-08-14

申请号：US13765429

申请日：2013-02-12

Applicant: BREWER SCIENCE INC.

Inventor： Qin Lin ,  Daniel M. Sullivan ,  Tony D. Flaim ,  Yubao Wang ,  Jamie Lea Storie

IPC: H01L21/308 ,  H01L23/498 ,  H01L21/768

CPC classification number: H01L23/49811 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reversal lithography approach is disclosed in which dark-field features are created on microelectronic substrates using bright-field lithography processes and a pattern reversal method. A wafer stack having a patterned imaging layer is provided that has a plurality of features formed thereon. A pattern reversal composition is applied to the patterned imaging layer overcoating the features, followed by wet etch-back of partially cured portions of the composition to expose the tops of the features. The imaging layer is then removed resulting in reversal of the pattern into the pattern reversal composition. This reversed pattern is then transferred into subsequent layers

Abstract translation: 公开了一种反转光刻方法，其中使用亮场光刻工艺和图案反转方法在微电子基板上产生暗场特征。 提供具有图案化成像层的晶片叠层，其具有形成在其上的多个特征。 将图案反转组合物施加到覆盖特征的图案化成像层上，随后湿法蚀刻组合物的部分固化部分以暴露特征的顶部。 然后去除成像层，导致图案反转成图案反转组合物。 然后将该反转图案转移到随后的层中