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    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES
    3.
    发明申请
    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES 审中-公开
    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR BUGICATION OF DARK-FIELD FEATURES

    公开(公告)号：US20140225252A1

    公开(公告)日：2014-08-14

    申请号：US13765429

    申请日：2013-02-12

    Applicant: BREWER SCIENCE INC.

    Inventor： Qin Lin ,  Daniel M. Sullivan ,  Tony D. Flaim ,  Yubao Wang ,  Jamie Lea Storie

    IPC: H01L21/308 ,  H01L23/498 ,  H01L21/768

    CPC classification number: H01L23/49811 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A reversal lithography approach is disclosed in which dark-field features are created on microelectronic substrates using bright-field lithography processes and a pattern reversal method. A wafer stack having a patterned imaging layer is provided that has a plurality of features formed thereon. A pattern reversal composition is applied to the patterned imaging layer overcoating the features, followed by wet etch-back of partially cured portions of the composition to expose the tops of the features. The imaging layer is then removed resulting in reversal of the pattern into the pattern reversal composition. This reversed pattern is then transferred into subsequent layers

    Abstract translation: 公开了一种反转光刻方法，其中使用亮场光刻工艺和图案反转方法在微电子基板上产生暗场特征。 提供具有图案化成像层的晶片叠层，其具有形成在其上的多个特征。 将图案反转组合物施加到覆盖特征的图案化成像层上，随后湿法蚀刻组合物的部分固化部分以暴露特征的顶部。 然后去除成像层，导致图案反转成图案反转组合物。 然后将该反转图案转移到随后的层中

    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING
    5.
    发明申请
    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING 有权
    用于石墨加工的旋转碳组合物

    公开(公告)号：US20140356593A1

    公开(公告)日：2014-12-04

    申请号：US14461109

    申请日：2014-08-15

    Applicant: Brewer Science Inc.

    Inventor： Vandana Krishnamurthy ,  Daniel M. Sullivan ,  Yubao Wang ,  Qin Lin ,  Sean Simmons

    IPC: B32B33/00 ,  B32B9/04

    CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

    Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

    Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化表面。 有利地，该材料在使用碳氟化合物蚀刻的图案转移到硅衬底期间表现出摆动阻力。

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