公开(公告)号：US20090109162A1

公开(公告)日：2009-04-30

申请号：US12274691

申请日：2008-11-20

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： G09G3/36

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

摘要翻译： 具有非晶硅TFT的非晶硅薄膜晶体管和移相寄存器包括第一导电区域，第二导电区域和第三导电区域。 第一导电区域形成在与衬底间隔开第一距离的第一平面上。 第二导电区域形成在与衬底间隔开第二距离的第二平面上。 第二导电区域包括主体导电区域和从主体导电区域的两端延伸的两个手导电区域以形成U形。 第三导电区域形成在第二平面上。 第三导电区域包括细长部分。 细长部分设置在第二导电区域的两个手导电区域之间。 具有非晶硅的非晶硅TFT和移位寄存器减小了栅电极和漏电极之间的寄生电容。

公开(公告)号：US07405716B2

公开(公告)日：2008-07-29

申请号：US11366324

申请日：2006-03-02

申请人： Back-Won Lee ,  Seung-Hwan Moon

发明人： Back-Won Lee ,  Seung-Hwan Moon

IPC分类号： G09G3/34

CPC分类号： G02F1/1345 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2320/0223 ,  G11C19/28

摘要： A driver circuit drives display device and LCD device has a driver circuit that includes driving stages and dummy stage. The driving stage includes output and control terminals. The output terminal of the present stage is connected to the control terminal of the previous state to be cascade-connected each other. The driving stage outputs driving signal for controlling the switching device arranged on the display device through the output terminal. The dummy stage includes dummy output terminal and dummy control terminal. The dummy output terminal is connected to the control terminal of the last driving stage to output dummy output signal for turning on or off the last driving stage. The dummy control terminal is connected to the dummy output terminal to be turned on or off by the dummy output signal. The delay of signals is reduced, thereby enhancing display quality.

摘要翻译： 驱动电路驱动显示装置，LCD装置具有包括驱动级和虚级的驱动电路。 驱动阶段包括输出和控制端子。 本阶段的输出端子连接到先前状态的控制端子以彼此级联连接。 驱动级通过输出端子输出用于控制布置在显示装置上的开关装置的驱动信号。 虚拟级包括虚拟输出端子和虚拟控制端子。 虚拟输出端子连接到最后一个驱动级的控制端子，以输出用于打开或关闭最后驱动级的虚拟输出信号。 虚拟控制端子通过虚拟输出信号连接到虚拟输出端子以被接通或关断。 信号的延迟减小，从而提高显示质量。

公开(公告)号：US20050145849A1

公开(公告)日：2005-07-07

申请号：US11056259

申请日：2005-02-14

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： G09G3/36 ,  G09G3/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L27/04 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L29/768

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

公开(公告)号：US08008690B2

公开(公告)日：2011-08-30

申请号：US12274691

申请日：2008-11-20

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： H01L27/148

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

摘要翻译： 具有非晶硅TFT的非晶硅薄膜晶体管和移相寄存器包括第一导电区域，第二导电区域和第三导电区域。 第一导电区域形成在与衬底间隔开第一距离的第一平面上。 第二导电区域形成在与衬底间隔开第二距离的第二平面上。 第二导电区域包括主体导电区域和从主体导电区域的两端延伸的两个手导电区域以形成U形。 第三导电区域形成在第二平面上。 第三导电区域包括细长部分。 细长部分设置在第二导电区域的两个手导电区域之间。 具有非晶硅的非晶硅TFT和移位寄存器减小了栅电极和漏电极之间的寄生电容。

公开(公告)号：US07023410B2

公开(公告)日：2006-04-04

申请号：US10407288

申请日：2003-04-04

申请人： Back-Won Lee ,  Seung-Hwan Moon

发明人： Back-Won Lee ,  Seung-Hwan Moon

IPC分类号： G09G3/36

CPC分类号： G02F1/1345 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2320/0223 ,  G11C19/28

摘要： A driver circuit drives display device and LCD device has a driver circuit that includes driving stages and dummy stage. The driving stage includes output and control terminals. The output terminal of the present stage is connected to the control terminal of the previous state to be cascade-connected each other. The driving stage outputs driving signal for controlling the switching device arranged on the display device through the output terminal. The dummy stage includes dummy output terminal and dummy control terminal. The dummy output terminal is connected to the control terminal of the last driving stage to output dummy output signal for turning on or off the last driving stage. The dummy control terminal is connected to the dummy output terminal to be turned on or off by the dummy output signal. The delay of signals is reduced, thereby enhancing display quality.

公开(公告)号：US20060049404A1

公开(公告)日：2006-03-09

申请号：US11223524

申请日：2005-09-09

申请人： Haeng-Won Park ,  Seung-Hwan Moon ,  Nam-Soo Kang ,  Yong-Soon Lee ,  Back-Won Lee

发明人： Haeng-Won Park ,  Seung-Hwan Moon ,  Nam-Soo Kang ,  Yong-Soon Lee ,  Back-Won Lee

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78696

摘要： A transistor includes a control electrode, a first current electrode and a second current electrode. The control electrode includes a body portion, and first and second hand portions protruded from first and second ends of the body portion, respectively. The first current electrode is electrically insulated from the control electrode and disposed over a region between the first and second hand portions of the control electrode. A portion of the first current electrode is overlapped with a portion of the control electrode. The second current electrode is electrically insulated from the control electrode and partially overlapped with the body portion, the first hand portion and the second hand portion of the control electrode. Therefore, parasitic capacitance is reduced.

摘要翻译： 晶体管包括控制电极，第一电流电极和第二电流电极。 控制电极包括主体部分，分别从主体部分的第一和第二端部突出的第一和第二手部分。 第一电流电极与控制电极电绝缘并设置在控制电极的第一和第二手部分之间的区域上。 第一电流电极的一部分与控制电极的一部分重叠。 第二电流电极与控制电极电绝缘，并与控制电极的主体部分，第一手部分和第二手部分重叠。 因此，寄生电容减小。

公开(公告)号：US20110284850A1

公开(公告)日：2011-11-24

申请号：US13193481

申请日：2011-07-28

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

摘要翻译： 具有非晶硅TFT的非晶硅薄膜晶体管和移相寄存器包括第一导电区域，第二导电区域和第三导电区域。 第一导电区域形成在与衬底间隔开第一距离的第一平面上。 第二导电区域形成在与衬底间隔开第二距离的第二平面上。 第二导电区域包括主体导电区域和从主体导电区域的两端延伸的两个手导电区域以形成U形。 第三导电区域形成在第二平面上。 第三导电区域包括细长部分。 细长部分设置在第二导电区域的两个手导电区域之间。 具有非晶硅的非晶硅TFT和移位寄存器减小了栅电极和漏电极之间的寄生电容。

公开(公告)号：US07842951B2

公开(公告)日：2010-11-30

申请号：US11223524

申请日：2005-09-09

申请人： Haeng-Won Park ,  Seung-Hwan Moon ,  Nam-Soo Kang ,  Yong-Soon Lee ,  Back-Won Lee

发明人： Haeng-Won Park ,  Seung-Hwan Moon ,  Nam-Soo Kang ,  Yong-Soon Lee ,  Back-Won Lee

IPC分类号： H01L33/16

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78696

摘要： A transistor includes a control electrode, a first current electrode and a second current electrode. The control electrode includes a body portion, and first and second hand portions protruded from first and second ends of the body portion, respectively. The first current electrode is electrically insulated from the control electrode and disposed over a region between the first and second hand portions of the control electrode. A portion of the first current electrode is overlapped with a portion of the control electrode. The second current electrode is electrically insulated from the control electrode and partially overlapped with the body portion, the first hand portion and the second hand portion of the control electrode. Therefore, parasitic capacitance is reduced.

摘要翻译： 晶体管包括控制电极，第一电流电极和第二电流电极。 控制电极包括主体部分，分别从主体部分的第一和第二端部突出的第一和第二手部分。 第一电流电极与控制电极电绝缘并设置在控制电极的第一和第二手部分之间的区域上。 第一电流电极的一部分与控制电极的一部分重叠。 第二电流电极与控制电极电绝缘，并与控制电极的主体部分，第一手部分和第二手部分重叠。 因此，寄生电容减小。

公开(公告)号：US20060161693A1

公开(公告)日：2006-07-20

申请号：US11366324

申请日：2006-03-02

申请人： Back-Won Lee ,  Seung-Hwan Moon

发明人： Back-Won Lee ,  Seung-Hwan Moon

IPC分类号： G06F3/00

CPC分类号： G02F1/1345 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2320/0223 ,  G11C19/28

摘要： A driver circuit drives display device and LCD device has a driver circuit that includes driving stages and dummy stage. The driving stage includes output and control terminals. The output terminal of the present stage is connected to the control terminal of the previous state to be cascade-connected each other. The driving stage outputs driving signal for controlling the switching device arranged on the display device through the output terminal. The dummy stage includes dummy output terminal and dummy control terminal. The dummy output terminal is connected to the control terminal of the last driving stage to output dummy output signal for turning on or off the last driving stage. The dummy control terminal is connected to the dummy output terminal to be turned on or off by the dummy output signal. The delay of signals is reduced, thereby enhancing display quality.

公开(公告)号：US06906385B2

公开(公告)日：2005-06-14

申请号：US10607151

申请日：2003-06-27

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： G09G3/36 ,  G09G3/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L27/04 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

摘要翻译： 具有非晶硅TFT的非晶硅薄膜晶体管和移相寄存器包括第一导电区域，第二导电区域和第三导电区域。 第一导电区域形成在与衬底间隔开第一距离的第一平面上。 第二导电区域形成在与衬底间隔开第二距离的第二平面上。 第二导电区域包括主体导电区域和从主体导电区域的两端延伸的两个手导电区域以形成U形。 第三导电区域形成在第二平面上。 第三导电区域包括细长部分。 细长部分设置在第二导电区域的两个手导电区域之间。 具有非晶硅的非晶硅TFT和移位寄存器减小了栅电极和漏电极之间的寄生电容。