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1.发明申请公开(公告)号：US20190252629A1
公开(公告)日：2019-08-15
申请号：US16329274
申请日：2018-06-21
发明人： Xiang Feng , Zhaokun Yang , Qinghe Wang , Sha Liu , Ruizhi Yang , Qiang Zhang , Chunyan Xie , Yun Qiu
IPC分类号： H01L51/05 , G02F1/1362 , H01L27/32 , H01L51/10 , G01N27/414
摘要： Disclosed by the present disclosure are an organic thin film transistor structure and a manufacturing method, a gas sensor, and a related apparatus: a gap, which contacts an organic active layer and which is used for accommodating a gas to be detected, is provided in the organic thin film transistor structure.
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2.发明授权公开(公告)号：US10804479B2
公开(公告)日：2020-10-13
申请号：US16329274
申请日：2018-06-21
发明人： Xiang Feng , Zhaokun Yang , Qinghe Wang , Sha Liu , Ruizhi Yang , Qiang Zhang , Chunyan Xie , Yun Qiu
IPC分类号： H01L51/05 , G02F1/1362 , H01L27/32 , G01N27/414 , H01L51/10 , H01L51/00
摘要： Disclosed by the present disclosure are an organic thin film transistor structure and a manufacturing method, a gas sensor, and a related apparatus: a gap, which contacts an organic active layer and which is used for accommodating a gas to be detected, is provided in the organic thin film transistor structure.
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公开(公告)号：US11785811B2
公开(公告)日：2023-10-10
申请号：US17241703
申请日：2021-04-27
发明人： Ning Liu , Jun Liu , Wei Song , Qinghe Wang , Bin Zhou , Liangchen Yan
IPC分类号： H01L29/08 , H10K59/124 , H10K59/126 , H10K59/12
CPC分类号： H10K59/124 , H10K59/126 , H10K59/1201
摘要： An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes: a base substrate, and a thin film transistor, a storage capacitor, and a lapping pattern for connecting the thin film transistor to the storage capacitor arranged on the base substrate; wherein the thin film transistor includes a semiconductor layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a source electrode and a drain electrode arranged sequentially in that order; the interlayer insulation layer includes at least two inorganic insulation layers and at least one organic insulation layer laminated one on another, and both a layer proximate to the base substrate and a layer distal to the base substrate in the interlayer insulation layer are the inorganic insulation layers.
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4.发明授权公开(公告)号：US11342431B2
公开(公告)日：2022-05-24
申请号：US16767247
申请日：2019-12-18
发明人： Tongshang Su , Dongfang Wang , Qinghe Wang , Ning Liu , Yongchao Huang , Yu Ji , Zheng Wang , Liangchen Yan
IPC分类号： H01L29/423 , H01L29/786 , H01L29/49 , H01L29/66 , H01L29/40 , H01L21/223 , H01L21/3213 , H01L21/383 , H01L21/4763 , H01L27/12
摘要： A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
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5.发明授权公开(公告)号：US11239264B2
公开(公告)日：2022-02-01
申请号：US16652219
申请日：2019-10-18
发明人： Tongshang Su , Dongfang Wang , Qinghe Wang , Liangchen Yan
摘要： The present disclosure provides a thin film transistor, a display substrate, a method for preparing the same, and a display device including the display substrate. The method for preparing the thin film transistor includes: forming an inorganic insulating film layer in contact with an electrode of the thin film transistor by a plasma enhanced chemical vapor deposition process at power of 9 kW to 25 kW, at a temperature of 190° C. to 380° C. and by using a mixture of gases N2, NH3 and SiH4 in a volume ratio of N2:NH3:SiH4=(10˜20):(5˜10):(1˜2), such that a stress value of the inorganic insulating film layer is reduced to be less than or equal to a threshold, and the inorganic insulating layer comprises silicon nitride.
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公开(公告)号：US11043644B2
公开(公告)日：2021-06-22
申请号：US15949112
申请日：2018-04-10
发明人： Qinghe Wang , Jinliang Hu , Rui Peng , Dongfang Wang , Guangcai Yuan
IPC分类号： H04R3/00 , H04R17/02 , H01L51/05 , H01L51/00 , H04R31/00 , H04R7/06 , H04R1/40 , H04R19/00 , H04R19/04 , G01H11/06 , H01L51/10 , H04R23/00 , H01L27/28
摘要： The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.
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公开(公告)号：US20210184126A1
公开(公告)日：2021-06-17
申请号：US17271637
申请日：2020-05-14
发明人： Tongshang Su , Dongfang Wang , Jun Liu , Yingbin Hu , Qinghe Wang , Shengping Du , Liangchen Yan
摘要： A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.
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8.发明授权公开(公告)号：US11011644B2
公开(公告)日：2021-05-18
申请号：US16506216
申请日：2019-07-09
发明人： Guangyao Li , Lei Huang , Haitao Wang , Jun Wang , Qinghe Wang , Wei Li , Dongfang Wang , Liangchen Yan
IPC分类号： H01L27/12 , H01L29/786 , G01N27/00 , H01L29/66
摘要： The present disclosure provides a thin film transistor, a thin film transistor array, and a method for detecting an object to be detected, wherein the thin film transistor is configured to detect a parameter of an object to be detected bound with a metal ion and includes an active layer, wherein: a carrier of the active layer without a metal element contained in the metal ion bound is of a first mobility, and a carrier of the active layer with the metal element bound is of a second mobility different from the first mobility.
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公开(公告)号：US10418447B2
公开(公告)日：2019-09-17
申请号：US15940043
申请日：2018-03-29
发明人： Guangyao Li , Guangcai Yuan , Dongfang Wang , Jun Wang , Qinghe Wang , Ning Liu
IPC分类号： H01L31/032 , H01L29/24 , H01L29/45 , H01L29/49 , H01L29/786 , H01L21/445 , H01L31/0392 , H01L31/113 , H01L29/66 , H01L21/02 , H01L29/84 , H01L27/12 , H01L27/28
摘要： Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.
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公开(公告)号：US11700688B2
公开(公告)日：2023-07-11
申请号：US17183909
申请日：2021-02-24
发明人： Yongchao Huang , Qinghe Wang , Haitao Wang , Jun Liu , Jun Cheng , Ce Zhao , Liangchen Yan
CPC分类号： H05K1/09 , H05K3/04 , H05K2201/10128
摘要： The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.
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