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公开(公告)号：US20230005739A1
公开(公告)日：2023-01-05
申请号：US17489203
申请日：2021-09-29
发明人： Fei Yu , Mengyang Xin , Junliang Li
摘要： A method for processing a workpiece, a plasma processing apparatus, and a semiconductor device which relate to the field of semiconductor manufacturing are provided. The method includes: placing the workpiece on a workpiece support in a chamber, the workpiece includes an substrate, a portion of the substrate is exposed; performing a flushing process on the workpiece by generating one or more species using a plasma from a process gas to create a mixture, the workpiece is exposed to the mixture; and applying a bias power during the flushing process to form an oxide layer with a preset thickness on the portion of the substrate. In this way, an oxide layer with a preset thickness is obtained after the flushing process.
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公开(公告)号：US20240355634A1
公开(公告)日：2024-10-24
申请号：US18653280
申请日：2024-05-02
发明人： Fei Yu , Mengyang Xin , Junliang Li
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/3244 , H01J2237/332 , H01J2237/334
摘要： A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.
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公开(公告)号：US12087608B2
公开(公告)日：2024-09-10
申请号：US17489226
申请日：2021-09-29
发明人： Mengyang Xin , Fei Yu , Gonglin Luo
IPC分类号： H01L21/677 , B25J19/00 , H01L21/687 , B25J9/04
CPC分类号： H01L21/67742 , B25J19/00 , H01L21/68707 , B25J9/043
摘要： The present disclosure provides a transfer apparatus and a processing system. The transfer apparatus includes a first transfer assembly configured to transfer a first workpiece to a chamber. The transfer apparatus includes a second transfer assembly configured to transfer a second workpiece from the chamber. The transfer apparatus includes an isolation assembly disposed between the first transfer assembly and the second transfer assembly and configured to isolate energy transfer between the first workpiece and the second workpiece. The transfer apparatus further includes a support assembly configured to restrict the isolation assembly between the first transfer assembly and the second transfer assembly.
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公开(公告)号：US20230005772A1
公开(公告)日：2023-01-05
申请号：US17489226
申请日：2021-09-29
发明人： Mengyang Xin , Fei Yu , Gonglin Luo
IPC分类号： H01L21/677 , H01L21/687 , B25J19/00
摘要： The present disclosure provides a transfer apparatus and a processing system. The transfer apparatus includes a first transfer assembly configured to transfer a first workpiece to a chamber. The transfer apparatus includes a second transfer assembly configured to transfer a second workpiece from the chamber. The transfer apparatus includes an isolation assembly disposed between the first transfer assembly and the second transfer assembly and configured to isolate energy transfer between the first workpiece and the second workpiece. The transfer apparatus further includes a support assembly configured to restrict the isolation assembly between the first transfer assembly and the second transfer assembly.
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公开(公告)号：US12009220B2
公开(公告)日：2024-06-11
申请号：US17489162
申请日：2021-09-29
发明人： Fei Yu , Mengyang Xin , Junliang Li
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/3244 , H01J2237/332 , H01J2237/334
摘要： A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.
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公开(公告)号：US20230005752A1
公开(公告)日：2023-01-05
申请号：US17489162
申请日：2021-09-29
发明人： Fei Yu , Mengyang Xin , Junliang Li
IPC分类号： H01L21/311 , H01J37/32
摘要： A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.
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