公开(公告)号：US20230197720A1

公开(公告)日：2023-06-22

申请号：US18171914

申请日：2023-02-21

申请人： Bell Semiconductor, LLC

发明人： Qing LIU ,  Prasanna KHARE ,  Nicolas LOUBET

IPC分类号： H01L27/088 ,  H01L21/84 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L21/265 ,  H01L29/417 ,  H01L21/8238 ,  H01L21/225 ,  H01L21/8234

CPC分类号： H01L27/0886 ,  H01L21/845 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/0847 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/41783 ,  H01L21/823821 ,  H01L29/66803 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/41791

摘要： A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FIN FET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

公开(公告)号：US20230121119A1

公开(公告)日：2023-04-20

申请号：US18068718

申请日：2022-12-20

申请人： Bell Semiconductor, LLC

发明人： Nicolas LOUBET ,  Prasanna KHARE

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L27/088 ,  H01L29/49

摘要： A method of making a semiconductor device includes forming a fin mask layer on a semiconductor layer, forming a dummy gate over the fin mask layer, and forming source and drain regions on opposite sides of the dummy gate. The dummy gate is removed and the underlying fin mask layer is used to define a plurality of fins in the semiconductor layer. A gate is formed over the plurality of fins.