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公开(公告)号:US08609867B2
公开(公告)日:2013-12-17
申请号:US13366857
申请日:2012-02-06
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/14
CPC分类号: H01L51/0072 , H01L51/0067 , H01L51/0541
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US08084765B2
公开(公告)日:2011-12-27
申请号:US11745308
申请日:2007-05-07
申请人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
发明人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
CPC分类号: H01L21/02126 , C08K5/5419 , C08K5/549 , C08L25/18 , C08L61/28 , H01L21/02118 , H01L21/3122 , H01L51/052 , Y10T428/31663
摘要: An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
摘要翻译: 公开了一种电子器件,例如薄膜晶体管,其具有由包括具有至少一个酚基的化合物和至少一个含有硅的基团的组合物形成的介电层。 所得的电介质层具有良好的电性能。
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公开(公告)号:US07456424B2
公开(公告)日:2008-11-25
申请号:US11167485
申请日:2005-06-27
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: H01L29/08
CPC分类号: H01L51/0541 , H01L51/0067
摘要: A thin film transistor composed of a semiconductor layer including an optionally substituted indolocarbazole.
摘要翻译: 一种由包括任选取代的吲哚咔唑的半导体层组成的薄膜晶体管。
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4.Compound with indolocarbazole moieties and devices containing such compound 有权
标题翻译: 具有吲哚并咔唑部分的化合物和含有该化合物的装置公开(公告)号:US07402681B2
公开(公告)日:2008-07-22
申请号:US11167512
申请日:2005-06-27
申请人: Beng S. Ong , Yu Qi , Yiliang Wu , Yuning Li
发明人: Beng S. Ong , Yu Qi , Yiliang Wu , Yuning Li
IPC分类号: C07D209/14 , C07D209/56
CPC分类号: H01L51/0072 , C07D487/04 , C07D487/14 , H01L51/0035 , H01L51/0068 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要: A compound composed of a plurality of optionally substituted indolocarbazole moieties which are the same or different from each other.
摘要翻译: 由多个彼此相同或不同的任选取代的吲哚咔唑部分组成的化合物。
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公开(公告)号:US08110690B2
公开(公告)日:2012-02-07
申请号:US12252766
申请日:2008-10-16
申请人: Yiliang Wu , Beng S Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/22 , C07D487/12
CPC分类号: H01L51/0541 , H01L51/0067
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US20090036689A1
公开(公告)日:2009-02-05
申请号:US12252766
申请日:2008-10-16
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/22 , C07D487/14
CPC分类号: H01L51/0541 , H01L51/0067
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US20120157689A1
公开(公告)日:2012-06-21
申请号:US13366857
申请日:2012-02-06
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/14
CPC分类号: H01L51/0072 , H01L51/0067 , H01L51/0541
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US20080277724A1
公开(公告)日:2008-11-13
申请号:US11745308
申请日:2007-05-07
申请人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
发明人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
CPC分类号: H01L21/02126 , C08K5/5419 , C08K5/549 , C08L25/18 , C08L61/28 , H01L21/02118 , H01L21/3122 , H01L51/052 , Y10T428/31663
摘要: An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
摘要翻译: 公开了一种电子器件,例如薄膜晶体管,其具有由包括具有至少一个酚基的化合物和至少一个含有硅的基团的组合物形成的介电层。 所得的电介质层具有良好的电性能。
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9.
公开(公告)号:US08049205B2
公开(公告)日:2011-11-01
申请号:US11398931
申请日:2006-04-06
申请人: Beng S. Ong , Yuning Li , Yiliang Wu
发明人: Beng S. Ong , Yuning Li , Yiliang Wu
CPC分类号: H01L51/0036 , H01L51/0558
摘要: An electronic device comprising a semiconductive material of Formula (I) wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
摘要翻译: 一种包含式(I)的半导体材料的电子器件,其中R是合适的烃或含杂原子的基团; n表示重复单元的数量。
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公开(公告)号:US07919574B2
公开(公告)日:2011-04-05
申请号:US12331571
申请日:2008-12-10
申请人: Yuning Li , Ping Liu , Yiliang Wu , Beng S Ong
发明人: Yuning Li , Ping Liu , Yiliang Wu , Beng S Ong
CPC分类号: C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要: A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or unsubstituted thieno[2,3-b]thiophene moiety. The polymer can be used as a semiconductor in electronics such as in organic thin film transistors.
摘要翻译: 包含一种或多种重复单元的聚合物,其中所述聚合物包括取代的噻吩并[3,2-b]噻吩组分A和相同类型的重复单元或不同类型的重复单元中的不同组分B,其中 该聚合物不包括取代或未取代的噻吩并[2,3-b]噻吩部分。 该聚合物可用作诸如有机薄膜晶体管的电子器件中的半导体。
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