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1.Compound with indolocarbazole moieties and devices containing such compound 有权
标题翻译: 具有吲哚并咔唑部分的化合物和含有该化合物的装置公开(公告)号:US07402681B2
公开(公告)日:2008-07-22
申请号:US11167512
申请日:2005-06-27
申请人: Beng S. Ong , Yu Qi , Yiliang Wu , Yuning Li
发明人: Beng S. Ong , Yu Qi , Yiliang Wu , Yuning Li
IPC分类号: C07D209/14 , C07D209/56
CPC分类号: H01L51/0072 , C07D487/04 , C07D487/14 , H01L51/0035 , H01L51/0068 , H01L51/0516 , H01L51/0541 , H01L51/0545
摘要: A compound composed of a plurality of optionally substituted indolocarbazole moieties which are the same or different from each other.
摘要翻译: 由多个彼此相同或不同的任选取代的吲哚咔唑部分组成的化合物。
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公开(公告)号:US08110690B2
公开(公告)日:2012-02-07
申请号:US12252766
申请日:2008-10-16
申请人: Yiliang Wu , Beng S Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/22 , C07D487/12
CPC分类号: H01L51/0541 , H01L51/0067
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US20090036689A1
公开(公告)日:2009-02-05
申请号:US12252766
申请日:2008-10-16
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/22 , C07D487/14
CPC分类号: H01L51/0541 , H01L51/0067
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US08609867B2
公开(公告)日:2013-12-17
申请号:US13366857
申请日:2012-02-06
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/14
CPC分类号: H01L51/0072 , H01L51/0067 , H01L51/0541
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US08084765B2
公开(公告)日:2011-12-27
申请号:US11745308
申请日:2007-05-07
申请人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
发明人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
CPC分类号: H01L21/02126 , C08K5/5419 , C08K5/549 , C08L25/18 , C08L61/28 , H01L21/02118 , H01L21/3122 , H01L51/052 , Y10T428/31663
摘要: An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
摘要翻译: 公开了一种电子器件,例如薄膜晶体管,其具有由包括具有至少一个酚基的化合物和至少一个含有硅的基团的组合物形成的介电层。 所得的电介质层具有良好的电性能。
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公开(公告)号:US07456424B2
公开(公告)日:2008-11-25
申请号:US11167485
申请日:2005-06-27
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: H01L29/08
CPC分类号: H01L51/0541 , H01L51/0067
摘要: A thin film transistor composed of a semiconductor layer including an optionally substituted indolocarbazole.
摘要翻译: 一种由包括任选取代的吲哚咔唑的半导体层组成的薄膜晶体管。
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公开(公告)号:US20120157689A1
公开(公告)日:2012-06-21
申请号:US13366857
申请日:2012-02-06
申请人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人: Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号: C07D487/04 , C07D487/14
CPC分类号: H01L51/0072 , H01L51/0067 , H01L51/0541
摘要: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。
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公开(公告)号:US20080277724A1
公开(公告)日:2008-11-13
申请号:US11745308
申请日:2007-05-07
申请人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
发明人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
CPC分类号: H01L21/02126 , C08K5/5419 , C08K5/549 , C08L25/18 , C08L61/28 , H01L21/02118 , H01L21/3122 , H01L51/052 , Y10T428/31663
摘要: An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
摘要翻译: 公开了一种电子器件,例如薄膜晶体管,其具有由包括具有至少一个酚基的化合物和至少一个含有硅的基团的组合物形成的介电层。 所得的电介质层具有良好的电性能。
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公开(公告)号:US08673959B2
公开(公告)日:2014-03-18
申请号:US12107508
申请日:2008-04-22
申请人: Yuning Li , Beng S Ong , Yiliang Wu , Ping Liu
发明人: Yuning Li , Beng S Ong , Yiliang Wu , Ping Liu
IPC分类号: A61K31/40 , C07D487/04
CPC分类号: H01L51/0036 , C07D487/04 , C08G61/124 , C08G61/126
摘要: A polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
摘要翻译: 包含至少一种类型的重复单元的聚合物,其包含至少一种类型的任选取代的吲哚咔唑部分和至少一种二价键。
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公开(公告)号:US08222076B2
公开(公告)日:2012-07-17
申请号:US11498031
申请日:2006-08-02
申请人: Yiliang Wu , Yuning Li , Beng S. Ong
发明人: Yiliang Wu , Yuning Li , Beng S. Ong
IPC分类号: H01L21/16
CPC分类号: H01L29/7869
摘要: A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.
摘要翻译: 一种用于制造电子器件的半导体层的方法,包括:液体沉积一种或多种氧化锌前体组合物并形成电子器件的至少一个半导体层,所述半导体层包含主要为无定形氧化锌的沉积的一种或多种氧化锌前体组合物。
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